Archivio Istituzionale della RicercaThe optical and structural properties of a-SiC:H thin films, deposited by PECVD by using different carbon sources: SiH4 + CH4 and SiH4 + C2H2 gas mixtures, have been characterized by transmittance-reflectance spectroscopy in the range of wavelength 300 - 2000 nm and by IR spectroscopy in the range 400 - 4000 cm-1. By knowing the elemental composition, the results on the physical properties of the films are examined and compared.
Deposition and characterization of a-SiC:H thin films / F., Demichelis; Pirri, Candido; Tresso, Elena Maria; F., Valente; E., Bolzan; V., Rigato. - In: PROCEEDINGS - SPIE. - ISSN 1018-4732. - 2253:(1994), pp. 539-550. [10.1117/12.192131]
Deposition and characterization of a-SiC:H thin films
PIRRI, Candido;TRESSO, Elena Maria;
1994
Abstract
The optical and structural properties of a-SiC:H thin films, deposited by PECVD by using different carbon sources: SiH4 + CH4 and SiH4 + C2H2 gas mixtures, have been characterized by transmittance-reflectance spectroscopy in the range of wavelength 300 - 2000 nm and by IR spectroscopy in the range 400 - 4000 cm-1. By knowing the elemental composition, the results on the physical properties of the films are examined and compared.
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https://hdl.handle.net/11583/1661299
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