Archivio Istituzionale della RicercaHigh electronic quality a-SiC : H and a-SiN : H films with optical gap up to 2.3 eV have been deposited by ultrahigh vacuum plasma enhanced chemical vapour deposition in undiluted and hydrogen diluted reactive gas mixtures. Optical and photoelectrical characterizations have been performed. Successful progresses towards the deposition of a-SiC : H and a-SiN : H having high electronic properties and low defect densities have been obtained. Modulated photocurrent technique has been applied to study gap state energetic profiles.
Defect characterization of a-SiC:H and a-SiN:H alloys produced by ultra high vacuum plasma enhanced chemical vapor deposition in different plasma conditions / T., Stapinski; G., Ambrosone; U., Coscia; Giorgis, Fabrizio; Pirri, Candido. - In: PHYSICA. B, CONDENSED MATTER. - ISSN 0921-4526. - 254:1-2(1998), pp. 99-106. [10.1016/S0921-4526(98)00408-6]
Defect characterization of a-SiC:H and a-SiN:H alloys produced by ultra high vacuum plasma enhanced chemical vapor deposition in different plasma conditions
GIORGIS, FABRIZIO;PIRRI, Candido
1998
Abstract
High electronic quality a-SiC : H and a-SiN : H films with optical gap up to 2.3 eV have been deposited by ultrahigh vacuum plasma enhanced chemical vapour deposition in undiluted and hydrogen diluted reactive gas mixtures. Optical and photoelectrical characterizations have been performed. Successful progresses towards the deposition of a-SiC : H and a-SiN : H having high electronic properties and low defect densities have been obtained. Modulated photocurrent technique has been applied to study gap state energetic profiles.
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https://hdl.handle.net/11583/1661138
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