A microscopic analysis of the hot-carrier dynamics governing intersubband light-emitting devices is presented. In particular, a non-conventional Monte Carlo simulation scheme is adopted, which allows to directly access details of the three-dimensional carrier relaxation, without resorting to phenomenological parameters. The competition between phonon-assisted relaxation and inter-carrier scattering in quantum cascade structures, both state-of-the-art mid-infrared lasers and prototypical THz emitters, is analysed and discussed.
Hot-carrier dynamics in semiconductor-based quantum-cascade lasers: a Monte Carlo study / Iotti, Rita Claudia; Rossi, Fausto. - In: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES. - ISSN 1386-9477. - STAMPA. - 13:(2002), pp. 715-718. [10.1016/S1386-9477(02)00266-7]
Hot-carrier dynamics in semiconductor-based quantum-cascade lasers: a Monte Carlo study
IOTTI, Rita Claudia;ROSSI, FAUSTO
2002
Abstract
A microscopic analysis of the hot-carrier dynamics governing intersubband light-emitting devices is presented. In particular, a non-conventional Monte Carlo simulation scheme is adopted, which allows to directly access details of the three-dimensional carrier relaxation, without resorting to phenomenological parameters. The competition between phonon-assisted relaxation and inter-carrier scattering in quantum cascade structures, both state-of-the-art mid-infrared lasers and prototypical THz emitters, is analysed and discussed.Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
https://hdl.handle.net/11583/1659037
Attenzione
Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo