A microscopic analysis of the hot-carrier dynamics governing intersubband light-emitting devices is presented. In particular, a non-conventional Monte Carlo simulation scheme is adopted, which allows to directly access details of the three-dimensional carrier relaxation, without resorting to phenomenological parameters. The competition between phonon-assisted relaxation and inter-carrier scattering in quantum cascade structures, both state-of-the-art mid-infrared lasers and prototypical THz emitters, is analysed and discussed.

Hot-carrier dynamics in semiconductor-based quantum-cascade lasers: a Monte Carlo study / Iotti, Rita Claudia; Rossi, Fausto. - In: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES. - ISSN 1386-9477. - STAMPA. - 13:(2002), pp. 715-718. [10.1016/S1386-9477(02)00266-7]

Hot-carrier dynamics in semiconductor-based quantum-cascade lasers: a Monte Carlo study

IOTTI, Rita Claudia;ROSSI, FAUSTO
2002

Abstract

A microscopic analysis of the hot-carrier dynamics governing intersubband light-emitting devices is presented. In particular, a non-conventional Monte Carlo simulation scheme is adopted, which allows to directly access details of the three-dimensional carrier relaxation, without resorting to phenomenological parameters. The competition between phonon-assisted relaxation and inter-carrier scattering in quantum cascade structures, both state-of-the-art mid-infrared lasers and prototypical THz emitters, is analysed and discussed.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/1659037
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