The relative current noise power spectral density S = S(I)(f)/I(2) observed in organic semiconductors exhibits a maximum at the trap filling transition between the ohmic and the space-charge-limited-current regime. The electrostatic conditions determining the crossover from ohmic to space-charge-limited transport at the trap filling transition are here discussed. These arguments shed light on the need to adopt a percolative fluctuations model to account for the competition between insulating and conductive phases as the voltage increases.
Does current noise arise from the competition between conductive and insulating phase at the trap-filling transition in organic semiconductors? / CARBONE A.F.; KUTREZBA-KOTOWSKA B; KOTOWSKI D. - In: AIP CONFERENCE PROCEEDINGS. - ISSN 0094-243X. - 922(2007), pp. 267-272.
|Titolo:||Does current noise arise from the competition between conductive and insulating phase at the trap-filling transition in organic semiconductors?|
|Data di pubblicazione:||2007|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1063/1.2759680|
|Appare nelle tipologie:||1.1 Articolo in rivista|