The relative current noise power spectral density S = S(I)(f)/I(2) observed in organic semiconductors exhibits a maximum at the trap filling transition between the ohmic and the space-charge-limited-current regime. The electrostatic conditions determining the crossover from ohmic to space-charge-limited transport at the trap filling transition are here discussed. These arguments shed light on the need to adopt a percolative fluctuations model to account for the competition between insulating and conductive phases as the voltage increases.

Does current noise arise from the competition between conductive and insulating phase at the trap-filling transition in organic semiconductors? / Carbone, ANNA FILOMENA; KUTREZBA KOTOWSKA, B; Kotowski, D.. - In: AIP CONFERENCE PROCEEDINGS. - ISSN 0094-243X. - 922:(2007), pp. 267-272. [10.1063/1.2759680]

Does current noise arise from the competition between conductive and insulating phase at the trap-filling transition in organic semiconductors?

CARBONE, ANNA FILOMENA;
2007

Abstract

The relative current noise power spectral density S = S(I)(f)/I(2) observed in organic semiconductors exhibits a maximum at the trap filling transition between the ohmic and the space-charge-limited-current regime. The electrostatic conditions determining the crossover from ohmic to space-charge-limited transport at the trap filling transition are here discussed. These arguments shed light on the need to adopt a percolative fluctuations model to account for the competition between insulating and conductive phases as the voltage increases.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11583/1652490
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