A new cost-effective setup for silicon bulk micromachining is presented which makes use of a polymeric protective coating, ProTEKR B2 coating, instead of a conventional hardmask. Different concentrations of KOH and bath conditions (pure, with surfactant, with stirrer, with both surfactant and stirrer) have been considered. ProTEKR B2 coating exhibits good adhesion to Si substrates, no degradation, etching rates and surface roughness comparable to literature data, and etching times greater than 180 min without damaging front side microstructures. Microcantilevers have also been fabricated using two different process flows in order to demonstrate the suitability of such a protective coating in microelectromechanical system (MEMS) technology.

Polymeric mask protection for alternative KOH silicon wet etching / Canavese, Giancarlo; Marasso, SIMONE LUIGI; Quaglio, Marzia; Cocuzza, Matteo; Ricciardi, Carlo; Pirri, Candido. - In: JOURNAL OF MICROMECHANICS AND MICROENGINEERING. - ISSN 0960-1317. - STAMPA. - 17:(2007), pp. 1387-1393. [10.1088/0960-1317/17/7/022]

Polymeric mask protection for alternative KOH silicon wet etching

CANAVESE, GIANCARLO;MARASSO, SIMONE LUIGI;QUAGLIO, Marzia;COCUZZA, MATTEO;RICCIARDI, Carlo;PIRRI, Candido
2007

Abstract

A new cost-effective setup for silicon bulk micromachining is presented which makes use of a polymeric protective coating, ProTEKR B2 coating, instead of a conventional hardmask. Different concentrations of KOH and bath conditions (pure, with surfactant, with stirrer, with both surfactant and stirrer) have been considered. ProTEKR B2 coating exhibits good adhesion to Si substrates, no degradation, etching rates and surface roughness comparable to literature data, and etching times greater than 180 min without damaging front side microstructures. Microcantilevers have also been fabricated using two different process flows in order to demonstrate the suitability of such a protective coating in microelectromechanical system (MEMS) technology.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/1649686
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