The elemental composition and the optical properties of hydrogenated amorphous GaAs prepared by r.f. reactive sputtering at different hydrogen and argon pressure and substrate temperature have been determined. From the dependence of the absorption coefficient on photon energy the optical gap has been deduced according to the Tauc law. The data obtained for stoichiometric samples are compared with similar data obtained by different authors. The influence of various deposition parameters on stoichiometry and on the optical properties is briefly discussed.
|Titolo:||Physical properties of hydrogenated amorphous gallium arsenide|
|Data di pubblicazione:||1991|
|Digital Object Identifier (DOI):||10.1007/BF02451284|
|Appare nelle tipologie:||1.1 Articolo in rivista|
File in questo prodotto: