A review of the most advanced microscopic treatments of optoelectronic quantum devices is presented. After recalling the fundamentals of carrier coherence versus energy relaxation/dephasing, we shall discuss a number of simulated experiments for two different regimes: coherent ultrafast excitation and steady-state conditions. We shall finally introduce a fully non-diagonal treatment of the problem, which shows that also in steady-state conditions one deals with a residual single-particle phase coherence, resulting in a scattering-induced state renormalization.

Theory of optoelectronic quantum devices / Ciancio, Emanuele; Iotti, Rita Claudia; Rossi, Fausto. - In: PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH. - ISSN 0031-8965. - STAMPA. - 201:3(2004), pp. 405-411. [10.1002/pssa.200304004]

Theory of optoelectronic quantum devices

CIANCIO, Emanuele;IOTTI, Rita Claudia;ROSSI, FAUSTO
2004

Abstract

A review of the most advanced microscopic treatments of optoelectronic quantum devices is presented. After recalling the fundamentals of carrier coherence versus energy relaxation/dephasing, we shall discuss a number of simulated experiments for two different regimes: coherent ultrafast excitation and steady-state conditions. We shall finally introduce a fully non-diagonal treatment of the problem, which shows that also in steady-state conditions one deals with a residual single-particle phase coherence, resulting in a scattering-induced state renormalization.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/1579307
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