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EnglishThe excellent wavelength tuning properties of InP-based quantum dash (QDash) layer structures were used to realize ultrawide-gain bandwidth lasers for applications in the 1.55 mu m telecommunication range. To expand the attainable gain bandwidth six QDash layers with three different emission wavelengths were combined in a laser structure. Broad area laser evaluation reveals good device performance. Within the optical telecommunication band at 1.55 mu m a gain bandwidth of more than 300 nm could be experimentally confirmed, which is in good quantitative agreement with theoretical predictions by taking into account an inhomogeneous carrier distribution between the different dash layers
Optical gain properties of InAs/InAlGaAs/InP quantum dash structures with a spectral gain bandwidth of more than 300 nm / A. SOMERS; W. KAISER; J.P. REITHMAIER; A. FORCHEL; GIOANNINI M.; I. MONTROSSET. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 89(2006), pp. 061107-1-061107-3. [10.1063/1.2266994]
| Titolo: | Optical gain properties of InAs/InAlGaAs/InP quantum dash structures with a spectral gain bandwidth of more than 300 nm. | |
| Autori: | ||
| Data di pubblicazione: | 2006 | |
| Rivista: | ||
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1063/1.2266994 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| 06Somers_APL.pdf | 2. Post-print / Author's Accepted Manuscript | Non Pubblico - Accesso privato/ristretto | Administrator Richiedi una copia |
http://hdl.handle.net/11583/1534944
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