Archivio Istituzionale della RicercaA microscopic analysis of basic nonequilibrium phenomena in unipolar quantum devices is presented. In particular, energy-relaxation processes governing the hot-carrier dynamics in the active region of GaAs-based quantum-cascade lasers are investigated by means of a generalized ensemble Monte Carlo simulation. Such analysis is essential in determining the validity range and limitations of purely macroscopic models with respect to basic device parameters, like injection current and temperature.
Microscopic theory of hot-carrier relaxation in semiconductor-based quantum-cascade lasers / Iotti, Rita Claudia; Rossi, Fausto. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 76:16(2000), pp. 2265-2267. [10.1063/1.126316]
Microscopic theory of hot-carrier relaxation in semiconductor-based quantum-cascade lasers
IOTTI, Rita Claudia;ROSSI, FAUSTO
2000
Abstract
A microscopic analysis of basic nonequilibrium phenomena in unipolar quantum devices is presented. In particular, energy-relaxation processes governing the hot-carrier dynamics in the active region of GaAs-based quantum-cascade lasers are investigated by means of a generalized ensemble Monte Carlo simulation. Such analysis is essential in determining the validity range and limitations of purely macroscopic models with respect to basic device parameters, like injection current and temperature.
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https://hdl.handle.net/11583/1508054
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