High-efficiency power-amplifier design requires numerous efforts to investigate both input and output harmonic terminations effects. A simplified theoretical approach to clarify the relevance of such terminations is presented here, and design criteria to improve efficiency for high-frequency applications are briefly discussed. An advanced active load/source–pull test-bench has been used to validate theoretical harmonic tuning techniques, characterizing an active device. The adopted optimization strategy is presented, together with measured results obtained with a medium-power 1-mm MESFET at 1 GHz. Input second harmonic impedances effects are stressed, showing a drain efficiency spread between 37%–49% for a fixed input power level, corresponding to 1-dB compression. Finally, as predicted by the presented theory, after input second harmonic tuning, further improvements are obtained, increasing fundamental output load resistive part, demonstrating an additional drain efficiency enhancement, which reaches a level of 55% at 1-dB compression.
An approach to harmonic load- and source-pull measurements for high-efficiency PA design / P., Colantonio; F., Giannini; E., Limiti; Teppati, Valeria. - In: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. - ISSN 0018-9480. - STAMPA. - 52:1(2004), pp. 191-198. [10.1109/TMTT.2003.821276]
An approach to harmonic load- and source-pull measurements for high-efficiency PA design
TEPPATI, VALERIA
2004
Abstract
High-efficiency power-amplifier design requires numerous efforts to investigate both input and output harmonic terminations effects. A simplified theoretical approach to clarify the relevance of such terminations is presented here, and design criteria to improve efficiency for high-frequency applications are briefly discussed. An advanced active load/source–pull test-bench has been used to validate theoretical harmonic tuning techniques, characterizing an active device. The adopted optimization strategy is presented, together with measured results obtained with a medium-power 1-mm MESFET at 1 GHz. Input second harmonic impedances effects are stressed, showing a drain efficiency spread between 37%–49% for a fixed input power level, corresponding to 1-dB compression. Finally, as predicted by the presented theory, after input second harmonic tuning, further improvements are obtained, increasing fundamental output load resistive part, demonstrating an additional drain efficiency enhancement, which reaches a level of 55% at 1-dB compression.File | Dimensione | Formato | |
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https://hdl.handle.net/11583/1406535
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