In this paper a thermal model that allows to obtain the transient thermal impedance curve of high power diodes and thyristors is presented. The results obtained from the model are compared with the experimental measurements performed on the most diffused families of device packages. In the last section of the paper a method for predicting the transient junction temperature by using PSPICE is outlined. The method is based on the fitting of the transient thermal impedance curve with a finite series of exponential terms.
|Titolo:||An Experimentally Validated Transient Thermal Impedance Model for High Power Diodes and Transistors|
|Data di pubblicazione:||2000|
|Appare nelle tipologie:||1.1 Articolo in rivista|
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