A generalized Monte Carlo procedure for the ultrafast dynamics of photoexcited carriers in a semiconductor is presented, where the coherence in the carrier system, as well as band renormalization and excitonic effects in the Hartree-Fock approximation are fully taken into account. The details of the coherent generation process, the energy relaxation, and dephasing of the carriers are analyzed. The approach presents a numerical method for the investigation of phenomena occurring close to the band gap and those typical for the relaxation of hot carriers.
|Titolo:||Analysis of Coherent and Incoherent Phenomena in Photoexcited Semiconductors: A Monte Carlo Approach|
|Data di pubblicazione:||1992|
|Digital Object Identifier (DOI):||10.1103/PhysRevLett.69.977|
|Appare nelle tipologie:||1.1 Articolo in rivista|