An alternative simulation strategy for the study of nonequilibrium carrier dynamics in quantum devices with open boundaries is presented. In particular, we propose replacing the usual modeling of open quantum systems based on phenomenological injection/loss rates with a kinetic description of the system-reservoir thermalization process. More specifically, in this simulation scheme the partial carrier thermalization induced by the device spatial boundaries is treated within the standard Monte Carlo approach via an effective scattering mechanism between the highly nonthermal device electrons and the thermal carrier distribution of the reservoir. The proposed simulation strategy is applyed to state-of-the-art semiconductor nanostructures.
|Titolo:||Monte Carlo simulation of hot-carrier phenomena in open quantum devices: A kinetic approach|
|Data di pubblicazione:||2004|
|Digital Object Identifier (DOI):||10.1063/1.1637965|
|Appare nelle tipologie:||1.1 Articolo in rivista|