We study few-particle interactions in GaN-coupled quantum dots and discuss how the built-in field characteristic of these structures strongly reinforce dipole–dipole and dipole–monopole interactions. We introduce a semi-analytical model that allows for a rapid and easy estimate of the magnitude of few-particle interactions and whose predictions are closer than 10% to “exact” results. We apply our study to the design of an all-optical read-out device that exploits long-range dipole–monopole interactions and may be also used to monitor the charge status of a quantum dot system.
|Titolo:||All-optical single-electron read-out devices based on GaN quantum dots|
|Data di pubblicazione:||2002|
|Digital Object Identifier (DOI):||10.1063/1.1532546|
|Appare nelle tipologie:||1.1 Articolo in rivista|