We study few-particle interactions in GaN-coupled quantum dots and discuss how the built-in field characteristic of these structures strongly reinforce dipole–dipole and dipole–monopole interactions. We introduce a semi-analytical model that allows for a rapid and easy estimate of the magnitude of few-particle interactions and whose predictions are closer than 10% to “exact” results. We apply our study to the design of an all-optical read-out device that exploits long-range dipole–monopole interactions and may be also used to monitor the charge status of a quantum dot system.
All-optical single-electron read-out devices based on GaN quantum dots / D'Amico, I.; Rossi, Fausto. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 81:27(2002), pp. 5213-5215. [10.1063/1.1532546]
All-optical single-electron read-out devices based on GaN quantum dots
ROSSI, FAUSTO
2002
Abstract
We study few-particle interactions in GaN-coupled quantum dots and discuss how the built-in field characteristic of these structures strongly reinforce dipole–dipole and dipole–monopole interactions. We introduce a semi-analytical model that allows for a rapid and easy estimate of the magnitude of few-particle interactions and whose predictions are closer than 10% to “exact” results. We apply our study to the design of an all-optical read-out device that exploits long-range dipole–monopole interactions and may be also used to monitor the charge status of a quantum dot system.File | Dimensione | Formato | |
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https://hdl.handle.net/11583/1405254
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