We present a fully three-dimensional study of the multiexciton optical response of vertically coupled GaN-based quantum dots via a direct-diagonalization approach. The proposed analysis is crucial in understanding the fundamental properties of few-particle/exciton interactions and, more important, may play an essential role in the design/optimization of semiconductor-based quantum information processing schemes. In particular, we focus on interdot exciton–exciton coupling, the key ingredient in recently proposed all-optical quantum processors. Our analysis demonstrates that there is a large window of realistic parameters for which both biexcitonic shift and oscillator strength are compatible with such implementation schemes.
Exciton-exciton interaction engineering in coupled GaN quantum dots / DE RINALDIS, S.; D'Amico, I.; Rossi, Fausto. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 81:22(2002), pp. 4236-4238. [10.1063/1.1519353]
Exciton-exciton interaction engineering in coupled GaN quantum dots
ROSSI, FAUSTO
2002
Abstract
We present a fully three-dimensional study of the multiexciton optical response of vertically coupled GaN-based quantum dots via a direct-diagonalization approach. The proposed analysis is crucial in understanding the fundamental properties of few-particle/exciton interactions and, more important, may play an essential role in the design/optimization of semiconductor-based quantum information processing schemes. In particular, we focus on interdot exciton–exciton coupling, the key ingredient in recently proposed all-optical quantum processors. Our analysis demonstrates that there is a large window of realistic parameters for which both biexcitonic shift and oscillator strength are compatible with such implementation schemes.File | Dimensione | Formato | |
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https://hdl.handle.net/11583/1405253
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