We present a fully three-dimensional study of the multiexciton optical response of vertically coupled GaN-based quantum dots via a direct-diagonalization approach. The proposed analysis is crucial in understanding the fundamental properties of few-particle/exciton interactions and, more important, may play an essential role in the design/optimization of semiconductor-based quantum information processing schemes. In particular, we focus on interdot exciton–exciton coupling, the key ingredient in recently proposed all-optical quantum processors. Our analysis demonstrates that there is a large window of realistic parameters for which both biexcitonic shift and oscillator strength are compatible with such implementation schemes.
|Titolo:||Exciton-exciton interaction engineering in coupled GaN quantum dots|
|Data di pubblicazione:||2002|
|Digital Object Identifier (DOI):||10.1063/1.1519353|
|Appare nelle tipologie:||1.1 Articolo in rivista|