A gauge-invariant formulation of Fermi's Golden rule is proposed. We shall rivisit conventional description of carrier-phonon scattering in the presence of high electric fields by means of a gauge-invariant density-matrix approach. We show that the so-called intracollisional field effect - usually accounted for - is ill-defined: it is simply an artifact due to the neglect of the time variation of the basis states which, in turn, leads to a ill-defined Markov limit in the carrier-phonon interaction process. This may account for the surprisingly good agreement between semiclassical and rigorous quantum-transport calculations.
Gauge-invariant formulation of high-field transport in semiconductors / Ciancio, E.; Rossi, Fausto. - In: PHYSICA. B, CONDENSED MATTER. - ISSN 0921-4526. - STAMPA. - 314:1-4(2002), pp. 91-94. [10.1016/S0921-4526(01)01347-3]
Gauge-invariant formulation of high-field transport in semiconductors
ROSSI, FAUSTO
2002
Abstract
A gauge-invariant formulation of Fermi's Golden rule is proposed. We shall rivisit conventional description of carrier-phonon scattering in the presence of high electric fields by means of a gauge-invariant density-matrix approach. We show that the so-called intracollisional field effect - usually accounted for - is ill-defined: it is simply an artifact due to the neglect of the time variation of the basis states which, in turn, leads to a ill-defined Markov limit in the carrier-phonon interaction process. This may account for the surprisingly good agreement between semiclassical and rigorous quantum-transport calculations.Pubblicazioni consigliate
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https://hdl.handle.net/11583/1405245
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