We present a novel approach for the control of exciton–exciton Coulomb coupling in semiconductor quantum dots. More specifically, the idea is to exploit electron–hole charge separations induced by the presence of a static external electric field. Indeed, in this way it is possible to significantly reinforce excitonic dipoles. This, in turn, allows us to control and magnify intra- as well as interdot few-exciton effects connected to dipole–dipole coupling. This mechanism will be accounted for within a simple analytical model, which is found to be in good agreement with fully three-dimensional calculations. The proposed approach allows to control and tune exciton–exciton Coulomb coupling, a key quantity for the design and realization of novel single-electron/exciton devices.
Field-Induced Exciton-Exciton Coupling in Semiconductor Quantum Dots / Biolatti, Eliana; D'Amico, I.; Rossi, Fausto. - In: PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH. - ISSN 0031-8965. - STAMPA. - 190:2(2002), pp. 511-515. [10.1002/1521-396X(200204)190:2<511::AID-PSSA511>3.0.CO;2-7]
Field-Induced Exciton-Exciton Coupling in Semiconductor Quantum Dots
BIOLATTI, Eliana;ROSSI, FAUSTO
2002
Abstract
We present a novel approach for the control of exciton–exciton Coulomb coupling in semiconductor quantum dots. More specifically, the idea is to exploit electron–hole charge separations induced by the presence of a static external electric field. Indeed, in this way it is possible to significantly reinforce excitonic dipoles. This, in turn, allows us to control and magnify intra- as well as interdot few-exciton effects connected to dipole–dipole coupling. This mechanism will be accounted for within a simple analytical model, which is found to be in good agreement with fully three-dimensional calculations. The proposed approach allows to control and tune exciton–exciton Coulomb coupling, a key quantity for the design and realization of novel single-electron/exciton devices.Pubblicazioni consigliate
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https://hdl.handle.net/11583/1405238
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