We present a novel approach for the control of exciton–exciton Coulomb coupling in semiconductor quantum dots. More specifically, the idea is to exploit electron–hole charge separations induced by the presence of a static external electric field. Indeed, in this way it is possible to significantly reinforce excitonic dipoles. This, in turn, allows us to control and magnify intra- as well as interdot few-exciton effects connected to dipole–dipole coupling. This mechanism will be accounted for within a simple analytical model, which is found to be in good agreement with fully three-dimensional calculations. The proposed approach allows to control and tune exciton–exciton Coulomb coupling, a key quantity for the design and realization of novel single-electron/exciton devices.
|Titolo:||Field-Induced Exciton-Exciton Coupling in Semiconductor Quantum Dots|
|Data di pubblicazione:||2002|
|Digital Object Identifier (DOI):||10.1002/1521-396X(200204)190:2<511::AID-PSSA511>3.0.CO;2-7|
|Appare nelle tipologie:||1.1 Articolo in rivista|