An accurate analysis of nanoscale compositional fluctuations in InGaAs/GaAs quantum wires grown by metalorganic chemical vapor deposition on V-grooved substrates was performed by means of high-spatial-resolution transmission electron microscopy techniques. Small In fluctuations (2%–3% excess indium), spatially localized over approximately 5 nm, were detected and related to changes in the photoluminescence and photoluminescence excitation spectra.
|Titolo:||Nanoscale compositional fluctuations in multiple InGaAs/GaAs quantum wires|
|Data di pubblicazione:||2000|
|Digital Object Identifier (DOI):||10.1063/1.372170|
|Appare nelle tipologie:||1.1 Articolo in rivista|