We propose a new type of hybrid systems formed by conventional semi-conductor nanostructures with the addition of remote insulating layers, where electron-hole interaction is enhanced by combining quantum and dielectric confinement over different length scales. Due to the polarization charges induced by dielectric mismatch at the semiconductor/insulator interfaces, the exciton binding energy can be strongly enhanced. By a novel theoretical scheme, we show that, for realistic structures based on conventional III-V quantum wires, such remote dielectric confinement allows exciton binding at room temperature.

Strong exciton binding in hybrid GaAs-based nanostructures / Goldoni, G.; Rossi, Fausto; Molinari, E.. - In: PHYSICA. B, CONDENSED MATTER. - ISSN 0921-4526. - STAMPA. - 272:1-4(1999), pp. 518-521. [10.1016/S0921-4526(99)00430-5]

Strong exciton binding in hybrid GaAs-based nanostructures

ROSSI, FAUSTO;
1999

Abstract

We propose a new type of hybrid systems formed by conventional semi-conductor nanostructures with the addition of remote insulating layers, where electron-hole interaction is enhanced by combining quantum and dielectric confinement over different length scales. Due to the polarization charges induced by dielectric mismatch at the semiconductor/insulator interfaces, the exciton binding energy can be strongly enhanced. By a novel theoretical scheme, we show that, for realistic structures based on conventional III-V quantum wires, such remote dielectric confinement allows exciton binding at room temperature.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/1405221
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