A scattering-state approach is proposed to study the propagation of extremely short optical pulses through semiconductor heterostructures. The formalism is applied to the propagation of exciton polaritons: Our simulated experiments predict the formation of an exciton-induced polarization grating when the light pulse is resonant with the excitonic transition, and suggest proper physical conditions for its experimental detection. Moreover, our analysis of the polariton transport in thick semiconductor layers reveals a decrease of the average polariton group velocity as a function of time, which we ascribe to a re-emission—reabsorption of light by excitons.
|Titolo:||Optical polarization grating in semiconductors induced by exciton-polaritons|
|Data di pubblicazione:||1999|
|Digital Object Identifier (DOI):||10.1103/PhysRevB.60.15554|
|Appare nelle tipologie:||1.1 Articolo in rivista|