We propose a new type of hybrid systems formed by conventional semiconductor nanostructures with the addition of remote insulating layers, where the electron-hole interaction is enhanced by combining quantum and dielectric confinement over different length scales. Because of the polarization charges induced by the dielectric mismatch at the semiconductor/insulator interfaces, we show that the exciton binding energy can be more than doubled. For conventional III-V quantum wires such remote dielectric confinement allows exciton binding at room temperature.

Strong exciton binding in quantum structures through remote dielectric confinement / Goldoni, G.; Rossi, Fausto; Molinari, E.. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - 80:22(1998), pp. 4995-4998. [10.1103/PhysRevLett.80.4995]

Strong exciton binding in quantum structures through remote dielectric confinement

ROSSI, FAUSTO;
1998

Abstract

We propose a new type of hybrid systems formed by conventional semiconductor nanostructures with the addition of remote insulating layers, where the electron-hole interaction is enhanced by combining quantum and dielectric confinement over different length scales. Because of the polarization charges induced by the dielectric mismatch at the semiconductor/insulator interfaces, we show that the exciton binding energy can be more than doubled. For conventional III-V quantum wires such remote dielectric confinement allows exciton binding at room temperature.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/1405204
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