This paper describes a new model of the bipolar transistor by which the effects of RF interference on the dc quiescent operating point upset can be computed. It is an improvement of the Gummel–Poon (GP) model used in circuit simulators like SPICE, in the sense that it takes into account distributed phenomena excited by RF interference like the dc and ac crowding of the emitter current in the base region. The model, implemented in SPICE, has been experimentally validated and its efficiency has been demonstrated. The model does not require more measurements then those necessary to extract the parameters of the conventional GP model.

Modified Gummel Poon Model for Susceptibility Prediction / Fiori, Franco; Pozzolo, Vincenzo. - In: IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY. - ISSN 0018-9375. - STAMPA. - 42:2(2000), pp. 206-213. [10.1109/15.852414]

Modified Gummel Poon Model for Susceptibility Prediction

FIORI, Franco;POZZOLO, Vincenzo
2000

Abstract

This paper describes a new model of the bipolar transistor by which the effects of RF interference on the dc quiescent operating point upset can be computed. It is an improvement of the Gummel–Poon (GP) model used in circuit simulators like SPICE, in the sense that it takes into account distributed phenomena excited by RF interference like the dc and ac crowding of the emitter current in the base region. The model, implemented in SPICE, has been experimentally validated and its efficiency has been demonstrated. The model does not require more measurements then those necessary to extract the parameters of the conventional GP model.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/1404674
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