Thin superconducting films of MgB2 has been prepared on r-plane sapphire and silicon nitride (SiN) by ex-situ technique and co-deposition of B and Mg at several substrate temperatures with the aim to fabricate superconducting bolometers. MgB2 films on r-plane sapphire, realized by annealing of a B film at 890°C, show a Tc=38 K and RRR=2 while no transition has been observed for MgB2 films on SiN above 5 K treated in the same way. A reliable process of MgB2 growth on SiN with Tc between 27 K and 30 K and transition width of 0.5 K has been performed by co-deposition Mg and B and following annealing to 600°C.
|Titolo:||MgB2 Superconducting Films for Bolometer Applications|
|Data di pubblicazione:||2003|
|Digital Object Identifier (DOI):||10.1109/TASC.2003.812211|
|Appare nelle tipologie:||1.1 Articolo in rivista|
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