In the present work we calculate for the first time the density of states of MgB2 for different tunneling directions by directly solving the two-band Eliashberg equations in the real-axis formulation starting from the first-principle calculation of the interband and intraband electron-phonon spectral functions. This complicated numeric procedure allows preserving the fine structures of the DOS in the phonon energy range. We show that the numeric inversion of the standard single-band Eliashberg equations when applied to the densities of states obtained by the two-band model may lead to artifacts in the extracted electron-phonon spectral function α2 F(ω). We also suggest that the small DOS structures produced by the two-band inter-action at energies between 20 and 100 meV can be observed only at very low temperature in junctions in perfect clean limit.

Electron-phonon spectral function and two-band model in tunneling measurement on MgB2 / Ummarino, Giovanni; Gonnelli, Renato; O. V., Dolgov; S. V., Shulga. - In: INTERNATIONAL JOURNAL OF MODERN PHYSICS B. - ISSN 0217-9792. - STAMPA. - 17:(2003), pp. 643-648. [10.1142/S0217979203016364]

Electron-phonon spectral function and two-band model in tunneling measurement on MgB2

UMMARINO, Giovanni;GONNELLI, Renato;
2003

Abstract

In the present work we calculate for the first time the density of states of MgB2 for different tunneling directions by directly solving the two-band Eliashberg equations in the real-axis formulation starting from the first-principle calculation of the interband and intraband electron-phonon spectral functions. This complicated numeric procedure allows preserving the fine structures of the DOS in the phonon energy range. We show that the numeric inversion of the standard single-band Eliashberg equations when applied to the densities of states obtained by the two-band model may lead to artifacts in the extracted electron-phonon spectral function α2 F(ω). We also suggest that the small DOS structures produced by the two-band inter-action at energies between 20 and 100 meV can be observed only at very low temperature in junctions in perfect clean limit.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/1400892
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