This paper deals with the simulation of the emission characteristics of self-assembled semiconductor quantum dash (QDash) active materials, characterized by high length-to-width and width-to-height ratios of the dash size and by a wide spreading of the dash dimensions. This significant size fluctuation requires to compute numerically the corresponding energy distribution of the electron and hole confined states. Furthermore, due to the long dash length, it is necessary to take into account the many longitudinal confined states that contribute to the emission spectrum. To implement a model that does not require excessive computation time, some simplifying assumptions have been introduced and validated numerically. Starting from good knowledge of the dash size, material composition, and optical waveguide dimensions, we have been able to simulate the amplified spontaneous emission and gain spectra of a quantum dash semiconductor optical amplifier with a good quantitative agreement with the measured data. As an application example, the model is used to predict the gain properties of different QDash ensembles having various size distributions.
|Titolo:||Numerical Modeling of the Emission Characteristics of Semiconductor Quantum Dash Materials for Lasers and Optical Amplifiers|
|Data di pubblicazione:||2004|
|Digital Object Identifier (DOI):||10.1109/JQE.2004.825201|
|Appare nelle tipologie:||1.1 Articolo in rivista|