Accuracy evaluation of on-wafer load-pull measurements

Ferrero, ANDREA PIERENRICO; Teppati, Valeria; Carullo, Alessio

doi:10.1109/22.899960

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This paper investigates the residual calibration uncertainty effects in on-wafer load-pull measurements. After the systematic error correction (based on a traditional error-box model) has been applied, the residual uncertainty on absolute-power-level measurements can dramatically affect the accuracy of typical nonlinear parameters such as gain and power-added efficiency under different load conditions. The main residual uncertainty contributions are highlighted both by a theoretical analysis and experiments. Finally, one of the possible causes for intermodulation-distortion measurement errors is shown.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11583/1400353

Titolo:	Accuracy evaluation of on-wafer load-pull measurements
Autori:	FERRERO, ANDREA PIERENRICO TEPPATI, VALERIA CARULLO, ALESSIO
Data di pubblicazione:	2001
Rivista:	IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Abstract:	This paper investigates the residual calibration uncertainty effects in on-wafer load-pull measurements. After the systematic error correction (based on a traditional error-box model) has been applied, the residual uncertainty on absolute-power-level measurements can dramatically affect the accuracy of typical nonlinear parameters such as gain and power-added efficiency under different load conditions. The main residual uncertainty contributions are highlighted both by a theoretical analysis and experiments. Finally, one of the possible causes for intermodulation-distortion measurement errors is shown.
Digital Object Identifier (DOI):	10.1109/22.899960
Appare nelle tipologie:	1.1 Articolo in rivista

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