This paper investigates the residual calibration uncertainty effects in on-wafer load-pull measurements. After the systematic error correction (based on a traditional error-box model) has been applied, the residual uncertainty on absolute-power-level measurements can dramatically affect the accuracy of typical nonlinear parameters such as gain and power-added efficiency under different load conditions. The main residual uncertainty contributions are highlighted both by a theoretical analysis and experiments. Finally, one of the possible causes for intermodulation-distortion measurement errors is shown.
|Titolo:||Accuracy evaluation of on-wafer load-pull measurements|
|Data di pubblicazione:||2001|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1109/22.899960|
|Appare nelle tipologie:||1.1 Articolo in rivista|