This paper investigates the residual calibration uncertainty effects in on-wafer load-pull measurements. After the systematic error correction (based on a traditional error-box model) has been applied, the residual uncertainty on absolute-power-level measurements can dramatically affect the accuracy of typical nonlinear parameters such as gain and power-added efficiency under different load conditions. The main residual uncertainty contributions are highlighted both by a theoretical analysis and experiments. Finally, one of the possible causes for intermodulation-distortion measurement errors is shown.
Accuracy evaluation of on-wafer load-pull measurements / FERRERO A.; TEPPATI V.; CARULLO A.. - In: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. - ISSN 0018-9480. - 49:1(2001), pp. 39-43. [10.1109/22.899960]
Titolo: | Accuracy evaluation of on-wafer load-pull measurements | |
Autori: | ||
Data di pubblicazione: | 2001 | |
Rivista: | ||
Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/22.899960 | |
Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
File | Descrizione | Tipologia | Licenza | |
---|---|---|---|---|
MTT_JAN2001.pdf | 2. Post-print / Author's Accepted Manuscript | PUBBLICO - Tutti i diritti riservati | Visibile a tuttiVisualizza/Apri |
http://hdl.handle.net/11583/1400353