This paper investigates the residual calibration uncertainty effects in on-wafer load-pull measurements. After the systematic error correction (based on a traditional error-box model) has been applied, the residual uncertainty on absolute-power-level measurements can dramatically affect the accuracy of typical nonlinear parameters such as gain and power-added efficiency under different load conditions. The main residual uncertainty contributions are highlighted both by a theoretical analysis and experiments. Finally, one of the possible causes for intermodulation-distortion measurement errors is shown.

Accuracy evaluation of on-wafer load-pull measurements / Ferrero, ANDREA PIERENRICO; Teppati, Valeria; Carullo, Alessio. - In: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. - ISSN 0018-9480. - 49:1(2001), pp. 39-43. [10.1109/22.899960]

Accuracy evaluation of on-wafer load-pull measurements

FERRERO, ANDREA PIERENRICO;TEPPATI, VALERIA;CARULLO, Alessio
2001

Abstract

This paper investigates the residual calibration uncertainty effects in on-wafer load-pull measurements. After the systematic error correction (based on a traditional error-box model) has been applied, the residual uncertainty on absolute-power-level measurements can dramatically affect the accuracy of typical nonlinear parameters such as gain and power-added efficiency under different load conditions. The main residual uncertainty contributions are highlighted both by a theoretical analysis and experiments. Finally, one of the possible causes for intermodulation-distortion measurement errors is shown.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/1400353
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