statistiche ricercatore

Nazione	#
US - Stati Uniti d'America	623
SG - Singapore	262
IT - Italia	220
CN - Cina	140
BR - Brasile	68
DE - Germania	55
BE - Belgio	38
KR - Corea	38
FI - Finlandia	29
GB - Regno Unito	22
IE - Irlanda	20
VN - Vietnam	19
CA - Canada	16
FR - Francia	15
IN - India	14
TR - Turchia	14
BG - Bulgaria	13
HK - Hong Kong	13
ID - Indonesia	12
RU - Federazione Russa	12
PL - Polonia	11
JP - Giappone	10
JO - Giordania	8
AT - Austria	7
ES - Italia	7
LV - Lettonia	6
NL - Olanda	6
UA - Ucraina	6
AE - Emirati Arabi Uniti	4
CH - Svizzera	4
MY - Malesia	4
AR - Argentina	3
BD - Bangladesh	3
CZ - Repubblica Ceca	3
KE - Kenya	3
SE - Svezia	3
TN - Tunisia	3
AZ - Azerbaigian	2
EC - Ecuador	2
IL - Israele	2
MA - Marocco	2
MX - Messico	2
PE - Perù	2
RO - Romania	2
UZ - Uzbekistan	2
ZA - Sudafrica	2
AU - Australia	1
BB - Barbados	1
BH - Bahrain	1
BJ - Benin	1
CL - Cile	1
CO - Colombia	1
CY - Cipro	1
DK - Danimarca	1
GR - Grecia	1
IQ - Iraq	1
IR - Iran	1
LK - Sri Lanka	1
LT - Lituania	1
SK - Slovacchia (Repubblica Slovacca)	1
SY - Repubblica araba siriana	1
VE - Venezuela	1
Totale	1.768

Nome	#
2022 Roadmap on Neuromorphic Computing and Engineering	315
Ionic Modulation of Electrical Conductivity of ZnO Due to Ambient Moisture	178
Electrochemical rewiring through quantum conductance effects in single metallic memristive nanowires	158
Memristive devices based on single ZnO nanowires-from material synthesis to neuromorphic functionalities	153
Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems	151
Influence of active electrode impurity on memristive characteristics of ECM devices	144
Brain-Inspired Structural Plasticity through Reweighting and Rewiring in Multi-Terminal Self-Organizing Memristive Nanowire Networks	142
Experimental and Modeling Study of Metal–Insulator Interfaces to Control the Electronic Transport in Single Nanowire Memristive Devices	135
Water-Mediated Ionic Migration in Memristive Nanowires with a Tunable Resistive Switching Mechanism	134
Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications	113
Resistive switching and role of interfaces in memristive devices based on amorphous NbOx by anodic oxidation	110
Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices	86
Totale	1.819

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	43	0	0	0	0	0	7	0	6	7	10	11	2
2021/2022	154	3	1	1	1	0	4	1	1	80	9	28	25
2022/2023	230	15	26	5	19	37	24	18	8	23	17	28	10
2023/2024	206	1	16	27	22	15	27	9	15	21	23	21	9
2024/2025	609	13	58	29	85	32	40	54	67	79	47	25	80
2025/2026	525	108	49	111	118	91	48	0	0	0	0	0	0
Totale													1.819

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