statistiche ricercatore

Nazione	#
US - Stati Uniti d'America	794
SG - Singapore	320
IT - Italia	247
VN - Vietnam	220
CN - Cina	156
RU - Federazione Russa	90
BR - Brasile	81
HK - Hong Kong	69
DE - Germania	59
KR - Corea	51
BE - Belgio	38
FI - Finlandia	32
IN - India	31
FR - Francia	29
GB - Regno Unito	25
IE - Irlanda	21
CA - Canada	18
TR - Turchia	16
JP - Giappone	14
BG - Bulgaria	13
ID - Indonesia	13
PL - Polonia	11
BD - Bangladesh	9
AT - Austria	8
JO - Giordania	8
ES - Italia	7
IQ - Iraq	7
NL - Olanda	7
UA - Ucraina	7
LV - Lettonia	6
PH - Filippine	6
TH - Thailandia	6
CH - Svizzera	5
KE - Kenya	5
TN - Tunisia	5
AE - Emirati Arabi Uniti	4
MY - Malesia	4
AR - Argentina	3
CZ - Repubblica Ceca	3
MX - Messico	3
PE - Perù	3
SE - Svezia	3
TW - Taiwan	3
UZ - Uzbekistan	3
ZA - Sudafrica	3
AZ - Azerbaigian	2
BO - Bolivia	2
CR - Costa Rica	2
EC - Ecuador	2
IL - Israele	2
MA - Marocco	2
RO - Romania	2
AU - Australia	1
BB - Barbados	1
BH - Bahrain	1
BJ - Benin	1
CL - Cile	1
CO - Colombia	1
CY - Cipro	1
DK - Danimarca	1
DZ - Algeria	1
GA - Gabon	1
GR - Grecia	1
GY - Guiana	1
IR - Iran	1
LK - Sri Lanka	1
LT - Lituania	1
PS - Palestinian Territory	1
PT - Portogallo	1
RS - Serbia	1
SA - Arabia Saudita	1
SK - Slovacchia (Repubblica Slovacca)	1
SY - Repubblica araba siriana	1
VC - Saint Vincent e Grenadine	1
VE - Venezuela	1
Totale	2.503

Nome	#
2022 Roadmap on Neuromorphic Computing and Engineering	374
Ionic Modulation of Electrical Conductivity of ZnO Due to Ambient Moisture	258
Electrochemical rewiring through quantum conductance effects in single metallic memristive nanowires	249
Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems	211
Influence of active electrode impurity on memristive characteristics of ECM devices	197
Memristive devices based on single ZnO nanowires-from material synthesis to neuromorphic functionalities	193
Water-Mediated Ionic Migration in Memristive Nanowires with a Tunable Resistive Switching Mechanism	186
Brain-Inspired Structural Plasticity through Reweighting and Rewiring in Multi-Terminal Self-Organizing Memristive Nanowire Networks	177
Experimental and Modeling Study of Metal–Insulator Interfaces to Control the Electronic Transport in Single Nanowire Memristive Devices	171
Resistive switching and role of interfaces in memristive devices based on amorphous NbOx by anodic oxidation	155
Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications	151
Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices	121
A quantum resistance memristor for an intrinsically traceable International System of Units standard	87
Technology Roadmap of Bioinspired Computing Hardware	30
Totale	2.560

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	13	0	0	0	0	0	0	0	0	0	0	11	2
2021/2022	154	3	1	1	1	0	4	1	1	80	9	28	25
2022/2023	230	15	26	5	19	37	24	18	8	23	17	28	10
2023/2024	206	1	16	27	22	15	27	9	15	21	23	21	9
2024/2025	609	13	58	29	85	32	40	54	67	79	47	25	80
2025/2026	1.266	108	49	111	118	91	74	185	91	276	152	11	0
Totale													2.560

PORTO @ Archivio Istituzionale della Ricerca