statistiche ricercatore

Nazione	#
US - Stati Uniti d'America	858
SG - Singapore	325
IT - Italia	283
VN - Vietnam	220
CN - Cina	159
RU - Federazione Russa	90
BR - Brasile	81
HK - Hong Kong	69
DE - Germania	59
KR - Corea	51
BD - Bangladesh	45
BE - Belgio	38
FI - Finlandia	32
FR - Francia	32
IN - India	32
CA - Canada	25
GB - Regno Unito	25
IE - Irlanda	21
TR - Turchia	16
JP - Giappone	14
BG - Bulgaria	13
ID - Indonesia	13
PL - Polonia	11
AT - Austria	8
JO - Giordania	8
NL - Olanda	8
ES - Italia	7
IQ - Iraq	7
UA - Ucraina	7
LV - Lettonia	6
PH - Filippine	6
TH - Thailandia	6
CH - Svizzera	5
KE - Kenya	5
TN - Tunisia	5
AE - Emirati Arabi Uniti	4
MY - Malesia	4
AR - Argentina	3
CZ - Repubblica Ceca	3
MX - Messico	3
PE - Perù	3
RO - Romania	3
SE - Svezia	3
TW - Taiwan	3
UZ - Uzbekistan	3
ZA - Sudafrica	3
AZ - Azerbaigian	2
BO - Bolivia	2
CR - Costa Rica	2
EC - Ecuador	2
IL - Israele	2
MA - Marocco	2
AU - Australia	1
BB - Barbados	1
BH - Bahrain	1
BJ - Benin	1
CL - Cile	1
CO - Colombia	1
CY - Cipro	1
DK - Danimarca	1
DZ - Algeria	1
GA - Gabon	1
GR - Grecia	1
GY - Guiana	1
HN - Honduras	1
IR - Iran	1
LK - Sri Lanka	1
LT - Lituania	1
PS - Palestinian Territory	1
PT - Portogallo	1
RS - Serbia	1
SA - Arabia Saudita	1
SK - Slovacchia (Repubblica Slovacca)	1
SY - Repubblica araba siriana	1
VC - Saint Vincent e Grenadine	1
VE - Venezuela	1
Totale	2.661

Nome	#
2022 Roadmap on Neuromorphic Computing and Engineering	387
Electrochemical rewiring through quantum conductance effects in single metallic memristive nanowires	270
Ionic Modulation of Electrical Conductivity of ZnO Due to Ambient Moisture	265
Influence of active electrode impurity on memristive characteristics of ECM devices	222
Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems	214
Memristive devices based on single ZnO nanowires-from material synthesis to neuromorphic functionalities	196
Water-Mediated Ionic Migration in Memristive Nanowires with a Tunable Resistive Switching Mechanism	187
Brain-Inspired Structural Plasticity through Reweighting and Rewiring in Multi-Terminal Self-Organizing Memristive Nanowire Networks	182
Experimental and Modeling Study of Metal–Insulator Interfaces to Control the Electronic Transport in Single Nanowire Memristive Devices	176
Resistive switching and role of interfaces in memristive devices based on amorphous NbOx by anodic oxidation	163
Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications	157
Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices	122
A quantum resistance memristor for an intrinsically traceable International System of Units standard	108
Technology Roadmap of Bioinspired Computing Hardware	69
Totale	2.718

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	2	0	0	0	0	0	0	0	0	0	0	0	2
2021/2022	154	3	1	1	1	0	4	1	1	80	9	28	25
2022/2023	230	15	26	5	19	37	24	18	8	23	17	28	10
2023/2024	206	1	16	27	22	15	27	9	15	21	23	21	9
2024/2025	609	13	58	29	85	32	40	54	67	79	47	25	80
2025/2026	1.424	108	49	111	118	91	74	185	91	276	152	103	66
Totale													2.718

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