This chapter presents the mathematical investigation of the emergence of static patterns in a Reaction-Diffusion Memristor Cellular Nonlinear Network (RD-MCNN) structure via the application of the theory of local activity. The proposed RD-MCNN has a planar grid structure, which consists of identical memristive cells, and the couplings are established in a purely resistive fashion. The single cell has a compact design being composed of a locally active memristor in parallel with a capacitor, besides the bias circuitry, namely a DC voltage source and its series resistor. We first introduce the mathematical model of the locally active memristor and then study the main characteristics of its AC equivalent circuit. Later on, we perform a stability analysis to obtain the stability criteria for the single cell. Consequently, we apply the theory of local activity to extract the parameter space associated with locally active, edge-of-chaos, and sharp-edge-of-chaos domains, performing all the necessary calculations parametrically. The corresponding parameter space domains are represented in terms of intrinsic cell characteristics such as the DC operating point, the capacitance, and the coupling resistance. Finally, we simulate the proposed RD-MCNN structure where we demonstrate the emergence of pattern formation for various values of the design parameters.

Pattern Formation in an RD-MCNN with Locally Active Memristors / Demirkol, As; Ascoli, A; Messaris, I; Tetzlaff, R - In: Memristor - An Emerging Device for Post-Moore's Computing and Applications / Chang Y-F. - ELETTRONICO. - London : IntechOpen, 2021. - ISBN 978-1-83968-956-7. - pp. 1-18 [10.5772/intechopen.100463]

### Pattern Formation in an RD-MCNN with Locally Active Memristors

#### Abstract

This chapter presents the mathematical investigation of the emergence of static patterns in a Reaction-Diffusion Memristor Cellular Nonlinear Network (RD-MCNN) structure via the application of the theory of local activity. The proposed RD-MCNN has a planar grid structure, which consists of identical memristive cells, and the couplings are established in a purely resistive fashion. The single cell has a compact design being composed of a locally active memristor in parallel with a capacitor, besides the bias circuitry, namely a DC voltage source and its series resistor. We first introduce the mathematical model of the locally active memristor and then study the main characteristics of its AC equivalent circuit. Later on, we perform a stability analysis to obtain the stability criteria for the single cell. Consequently, we apply the theory of local activity to extract the parameter space associated with locally active, edge-of-chaos, and sharp-edge-of-chaos domains, performing all the necessary calculations parametrically. The corresponding parameter space domains are represented in terms of intrinsic cell characteristics such as the DC operating point, the capacitance, and the coupling resistance. Finally, we simulate the proposed RD-MCNN structure where we demonstrate the emergence of pattern formation for various values of the design parameters.
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2021
978-1-83968-956-7
Memristor - An Emerging Device for Post-Moore's Computing and Applications
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Utilizza questo identificativo per citare o creare un link a questo documento: `https://hdl.handle.net/11583/2988754`