PORTO @ 
Archivio Istituzionale della Ricerca
IRIS è la soluzione IT che facilita la raccolta e la gestione dei dati relativi alle attività e ai prodotti della ricerca. Fornisce a ricercatori, amministratori e valutatori gli strumenti per monitorare i risultati della ricerca, aumentarne la visibilità e allocare in modo efficace le risorse disponibili.
EnglishWe performed molecular dynamics simulations to study the atomic structure of the β-SiC/Si(001) and (111) interfaces. The wide lattice mismatch between the two materials (?20%) introduces an array of misfit dislocations along the interface, responsible for releasing almost all the strain which would be present in a pseudomorphic structure. The interface termination, its stoichiometry and the core dislocation structures are discussed here; for the most stable heterostructures, the simulated HREM images are presented, and the features connected to the peculiar interface reconstructions shown.
Combined HREM and theoretical analysis of SiC/Si interfaces / Grillo, V.; Frabboni, S.; Cicero, G.; Savini, G.; Catellani, A.. - STAMPA. - (2003), pp. 69-72.
| Titolo: | Combined HREM and theoretical analysis of SiC/Si interfaces | |
| Autori: | ||
| Data di pubblicazione: | 2003 | |
| Titolo del libro: | Microscopy of Semiconducting Materials 2003 | |
| Abstract: | We performed molecular dynamics simulations to study the atomic structure of the β-SiC/Si(001) an...d (111) interfaces. The wide lattice mismatch between the two materials (?20%) introduces an array of misfit dislocations along the interface, responsible for releasing almost all the strain which would be present in a pseudomorphic structure. The interface termination, its stoichiometry and the core dislocation structures are discussed here; for the most stable heterostructures, the simulated HREM images are presented, and the features connected to the peculiar interface reconstructions shown. | |
| ISBN: | 9781351074636 | |
| Appare nelle tipologie: | 2.1 Contributo in volume (Capitolo o Saggio) |
File in questo prodotto:
http://hdl.handle.net/11583/2836174
Copyright © 2021