Bilayer thick films of sacrificial titanium dioxide and Nb-doped lead zirconate titanate (PZTN) have been deposited on bare silicon wafers using electrophoretic deposition (EPD) technique. Deposition of such ceramic particles, dispersed ethanol-based suspensions, on semiconductor substrate has been made possible after preparation of alloyed junctions Al/Si characterized by ohmic behaviour. Sintering of green TiO2/PZTN films was performed at 900 ◦C for 1 h. The composition of the films, the thickness and relative density of the deposited materials have been analysed by EDS-SEM analysis. The lead diffusion through the silicon wafer has been reduced.
Electrophoretic deposition of bilayer based on sacrificial titanium dioxide and lead zirconate titanate on bare silicon wafer / Galizia, Pietro; Galassi, Carmen - In: Key Engineering Materials / Boccaccini A. R., Dickerson J. H., Ferrari B., Van der Biest O., Uchikoshi T.. - STAMPA. - [s.l] : Trans Tech Publications Ltd, 2015. - ISBN 9783038354970. - pp. 132-135 [10.4028/www.scientific.net/KEM.654.132]
Electrophoretic deposition of bilayer based on sacrificial titanium dioxide and lead zirconate titanate on bare silicon wafer
GALIZIA, PIETRO;
2015
Abstract
Bilayer thick films of sacrificial titanium dioxide and Nb-doped lead zirconate titanate (PZTN) have been deposited on bare silicon wafers using electrophoretic deposition (EPD) technique. Deposition of such ceramic particles, dispersed ethanol-based suspensions, on semiconductor substrate has been made possible after preparation of alloyed junctions Al/Si characterized by ohmic behaviour. Sintering of green TiO2/PZTN films was performed at 900 ◦C for 1 h. The composition of the films, the thickness and relative density of the deposited materials have been analysed by EDS-SEM analysis. The lead diffusion through the silicon wafer has been reduced.Pubblicazioni consigliate
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https://hdl.handle.net/11583/2644492
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