Archivio Istituzionale della RicercaMICUCCI, DANIELE
Mostra
records
Risultati 1 - 2 di 2 (tempo di esecuzione: 0.007 secondi).
Analysis of high-temperature degradation mechanisms at the interface between bismuth telluride and metals and their effect on contact resistance increase
2026 Katsura, A.; Gohara, H.; Hirose, Y.; Tsurumoto, M.; Suetake, A.; Micucci, D.; Specchia, S.; Iwase, E.; Sugahara, T.
Influence of semiconductor thickness for the contact resistance measurement with transfer length method at the interface between bismuth telluride thermoelectric materials and metals
2025 Katsura, A.; Tsurumoto, M.; Suetake, A.; Hirose, Y.; Micucci, D.; Specchia, S.; Sugahara, T.
| Citazione | Data di pubblicazione | Autori | File |
|---|---|---|---|
| Analysis of high-temperature degradation mechanisms at the interface between bismuth telluride and metals and their effect on contact resistance increase / Katsura, A.; Gohara, H.; Hirose, Y.; Tsurumoto, M.; Suetake, A.; Micucci, D.; Specchia, S.; Iwase, E.; Sugahara, T.. - In: ACS APPLIED ENGINEERING MATERIALS. - ISSN 2771-9545. - ELETTRONICO. - 4:1(2026), pp. 254-259. [10.1021/acsaenm.5c00951] | 1-gen-2026 | Micucci, D.Specchia, S. + | Appl Eng Mater - Katsura - in press 2026.pdf; Katsura 2026 - accepted.pdf |
| Influence of semiconductor thickness for the contact resistance measurement with transfer length method at the interface between bismuth telluride thermoelectric materials and metals / Katsura, A.; Tsurumoto, M.; Suetake, A.; Hirose, Y.; Micucci, D.; Specchia, S.; Sugahara, T.. - In: THIN SOLID FILMS. - ISSN 0040-6090. - STAMPA. - 819:(2025), pp. 1-8. [10.1016/j.tsf.2025.140668] | 1-gen-2025 | Micucci, D.Specchia, S. + | Thin Solid Films 819 2025 140668 - Katsura.pdf; Thin Solid Films - Katsura postprint.pdf |