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The Doherty Power Amplifier: Review of Recent Solutions and Trends, file e384c42e-3a35-d4b2-e053-9f05fe0a1d67
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2.410
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Generalized mixed-mode S-parameters, file e384c42d-fb56-d4b2-e053-9f05fe0a1d67
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1.684
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K-Band GaAs MMIC Doherty Power Amplifier for Microwave Radio With Optimized Driver, file e384c42e-3286-d4b2-e053-9f05fe0a1d67
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1.198
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On the Substrate Thermal Optimization in SiC-Based Backside-Mounted High-Power GaN FETs, file e384c42d-f58f-d4b2-e053-9f05fe0a1d67
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1.066
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Piezoresistive flexible composite for robotic tactile applications, file e384c42e-2e8a-d4b2-e053-9f05fe0a1d67
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934
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A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation, file e384c42d-f0d7-d4b2-e053-9f05fe0a1d67
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907
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3-3.6 GHz Wideband GaN Doherty power amplifier exploiting output compensation stages, file e384c42e-1a3d-d4b2-e053-9f05fe0a1d67
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886
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A 22W 65% efficiency GaN Doherty power amplifier at 3.5 GHz for WiMAX applications, file e384c42e-16e5-d4b2-e053-9f05fe0a1d67
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847
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3.5 GHz WiMAX GaN Doherty Power Amplifier with 2nd harmonic tuning, file e384c42e-1e98-d4b2-e053-9f05fe0a1d67
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804
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A 0.6–3.8 GHz GaN Power Amplifier Designed Through a Simple Strategy, file e384c42e-f168-d4b2-e053-9f05fe0a1d67
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765
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An overview on recent developments in RF and microwave power H-terminated diamond MESFET technology, file e384c42e-3070-d4b2-e053-9f05fe0a1d67
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733
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Microwave Measurements Part I: Linear Measurements, file e384c42d-f945-d4b2-e053-9f05fe0a1d67
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710
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When self-consistency makes a difference, file e384c42e-0587-d4b2-e053-9f05fe0a1d67
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664
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Microwave Measurements. Part II – Nonlinear Measurements, file e384c42d-f944-d4b2-e053-9f05fe0a1d67
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604
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Ag nanoparticle-based inkjet printed planar transmission lines for RF and microwave applications: considerations on ink composition, nanoparticle size distribution and sintering time, file e384c42e-187f-d4b2-e053-9f05fe0a1d67
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593
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13-bit GaAs serial-to-parallel converter with compact layout for core-chip applications, file e384c42e-30ea-d4b2-e053-9f05fe0a1d67
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592
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Behavioral modeling of GaN-based power amplifiers: impact of electrothermal feedback on the model accuracy and identification, file e384c42e-09f5-d4b2-e053-9f05fe0a1d67
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582
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Dual-Band GaN MMIC Power Amplifier for Microwave Backhaul Applications, file e384c42e-2f43-d4b2-e053-9f05fe0a1d67
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574
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A K-band GaAs MMIC Doherty power amplifier for point-to-point microwave backhaul applications, file e384c42e-3075-d4b2-e053-9f05fe0a1d67
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569
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Design of a broadband multiprobe reflectometer, file e384c42d-e1ea-d4b2-e053-9f05fe0a1d67
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550
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Physics-based large-signal sensitivity analysis of microwave circuits using technological parametric sensitivity from multidimensional semiconductor device models, file e384c42d-e16f-d4b2-e053-9f05fe0a1d67
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536
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Modeling the Conductor Losses of Thick Multiconductor Coplanar Waveguides and Striplines: A Conformal Mapping Approach, file e384c42e-bcef-d4b2-e053-9f05fe0a1d67
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515
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Development of single-stage and Doherty GaN-based hybrid RF power amplifiers for quasi-constant envelope and high PAPR wireless standards, file e384c42e-12cd-d4b2-e053-9f05fe0a1d67
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477
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Evaluating GaN Doherty architectures for 4G Picocells, WiMax and microwave backhaul links, file e384c42e-2ffb-d4b2-e053-9f05fe0a1d67
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476
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X-band wideband 5W GaN MMIC power amplifier with large-signal gain equalization, file e384c42e-1ec4-d4b2-e053-9f05fe0a1d67
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462
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Testing microwave devices under different source impedances: a novel technique for on-line measurement of source and device reflection coefficients, file e384c42d-ee29-d4b2-e053-9f05fe0a1d67
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430
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A new, simple, test-set for on-wafer characterization of millimeter-wave electro-optic devices, file e384c42d-ecff-d4b2-e053-9f05fe0a1d67
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391
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A Measurement System for On-line Estimation of Weed Coverage, file e384c42d-ee99-d4b2-e053-9f05fe0a1d67
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384
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GaN Monolithic Power Amplifiers for Microwave Backhaul Applications, file e384c42e-f30d-d4b2-e053-9f05fe0a1d67
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302
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Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios, file e384c42e-3492-d4b2-e053-9f05fe0a1d67
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296
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A design strategy for AM/PM compensation in GaN Doherty Power Amplifiers, file e384c42f-d7d0-d4b2-e053-9f05fe0a1d67
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295
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Design and characterization of SiC varactor-based phase shifters, file e384c42e-2800-d4b2-e053-9f05fe0a1d67
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289
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High Efficiency Power Amplifiers for Modern Mobile Communications: The Load-Modulation Approach, file e384c42f-d606-d4b2-e053-9f05fe0a1d67
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262
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Accurate large-signal equivalent circuit of surface channel diamond FETs based on the Chalmers model, file e384c42e-11bd-d4b2-e053-9f05fe0a1d67
|
235
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Whispering gallery mode thermometry, file e384c42f-4213-d4b2-e053-9f05fe0a1d67
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235
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A 4-W Doherty Power Amplifier in GaN MMIC Technology for 15-GHz Applications, file e384c42f-eb35-d4b2-e053-9f05fe0a1d67
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226
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Design of an 87% Fractional Bandwidth Doherty Power Amplifier Supported by a Simplified Bandwidth Estimation Method, file e384c42f-fcd2-d4b2-e053-9f05fe0a1d67
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226
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A comprehensive class A to B power and load-pull characterization of GaN HEMTs on SiC and sapphire substrates, file e384c42d-f1cb-d4b2-e053-9f05fe0a1d67
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193
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Testing devices under different source impedances: a novel technique for on-line measurement of source and device reflection coefficients, file e384c42e-1d8b-d4b2-e053-9f05fe0a1d67
|
110
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Concurrent Efficient Evaluation of Small-Change Parameters and Green's Functions for TCAD Device Noise and Variability Analysis, file e384c42f-5d45-d4b2-e053-9f05fe0a1d67
|
98
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3.1-3.6 GHz 22 W GaN Doherty Power Amplifier, file e384c432-d6e3-d4b2-e053-9f05fe0a1d67
|
90
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Ultralow-Power Digital Control and Signal Conditioning in GaAs MMIC Core Chip for X-Band AESA Systems, file e384c433-bca8-d4b2-e053-9f05fe0a1d67
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58
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A 3-3.8 GHz Class-J GaN HEMT Power Amplifier, file e384c432-d854-d4b2-e053-9f05fe0a1d67
|
50
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Design of a wideband doherty power amplifier with high efficiency for 5g application, file e384c433-8909-d4b2-e053-9f05fe0a1d67
|
49
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Low power GaAs digital and analog functionalities for microwave signal conditioning in AESA systems, file e384c432-c0ca-d4b2-e053-9f05fe0a1d67
|
46
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Design strategy of a 2.8–3.6 GHz 20W GaN Doherty power amplifier, file e384c432-83d2-d4b2-e053-9f05fe0a1d67
|
43
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Linearity-aware design of Doherty power amplifiers, file e384c432-5a89-d4b2-e053-9f05fe0a1d67
|
41
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Thermal-aware GaN/Si MMIC design for space applications, file e384c431-8679-d4b2-e053-9f05fe0a1d67
|
32
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A Simple Method to Identify Parametric Oscillations in Power Amplifiers Using Harmonic Balance Solvers, file e384c432-fe99-d4b2-e053-9f05fe0a1d67
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32
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Ka-band 4 W GaN/Si MMIC power amplifier for CW radar applications, file e384c434-47b0-d4b2-e053-9f05fe0a1d67
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32
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Electro-magnetic Crosstalk Effects in a Millimeter-wave MMIC Stacked Cell, file e384c432-5a8c-d4b2-e053-9f05fe0a1d67
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29
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A Wideband Highly Linear Distributed Amplifier Using Intermodulation Cancellation Technique for Stacked-HBT Cell, file e384c432-5cd8-d4b2-e053-9f05fe0a1d67
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28
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Broadband Class-J GaN Doherty Power Amplifier, file e384c434-7e16-d4b2-e053-9f05fe0a1d67
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24
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Accurate Characterization of High-Q Microwave Resonances for Metrology Applications, file e384c433-6b6f-d4b2-e053-9f05fe0a1d67
|
21
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Efficient EM-based variability analysis of passive microwave structures through parameterized reduced-order behavioral models, file 1f65fb1b-a24a-4e76-b62a-38be40e583b3
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19
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Watt-level 21-25 GHz Integrated Doherty Power Amplifier in GaAs Technology, file e384c433-381d-d4b2-e053-9f05fe0a1d67
|
18
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K-band combined GaAs monolithic Doherty power amplifier, file e384c431-c38c-d4b2-e053-9f05fe0a1d67
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16
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Evaluation of a stacked-FET cell for high-frequency applications, file e384c433-3f07-d4b2-e053-9f05fe0a1d67
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16
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GaAs-based serial-input-parallel-output interfaces for microwave core-chips, file e384c434-4ce1-d4b2-e053-9f05fe0a1d67
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16
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S-band hybrid amplifiers based on hydrogenated diamond FETs, file e384c432-c8ff-d4b2-e053-9f05fe0a1d67
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15
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A comprehensive harmonic analysis of current-mode power amplifiers, file e384c434-1015-d4b2-e053-9f05fe0a1d67
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14
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3.5 GHz WiMAX GaN Doherty Power Amplifier with 2nd harmonic tuning, file e384c42e-1a62-d4b2-e053-9f05fe0a1d67
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13
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Generalized Symmetrical 3 dB Power Dividers with Complex Termination Impedances, file e384c434-3844-d4b2-e053-9f05fe0a1d67
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13
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A novel smart caliper foam pig for low-cost pipeline inspection - Part B: Field test and data processing, file e384c42f-19b9-d4b2-e053-9f05fe0a1d67
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12
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A Novel Stacked Cell Layout for High Frequency Power Applications, file e384c433-6d08-d4b2-e053-9f05fe0a1d67
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12
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A Ka-band 33 dBm Stacked Power Amplifier Cell in 100 nm GaN-on-Si Technology, file e384c434-2f86-d4b2-e053-9f05fe0a1d67
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12
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Space-Compliant Design of a Millimeter-Wave GaN-on-Si Stacked Power Amplifier Cell through Electro-Magnetic and Thermal Simulations, file e384c433-dbbe-d4b2-e053-9f05fe0a1d67
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11
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A novel smart caliper foam pig for low-cost pipeline inspection—Part A: Design and laboratory characterization, file e384c42f-1431-d4b2-e053-9f05fe0a1d67
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9
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System Level Analysis of Millimetre-wave GaN-based MIMO Radar for Detection of Micro Unmanned Aerial Vehicles, file e384c432-a408-d4b2-e053-9f05fe0a1d67
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6
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Development of GaN/Si MMIC Power Amplifiers for Millimetre-wave FMCW Radar Applications, file 8f363029-fd59-4e07-ae92-b58b5af77176
|
5
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Microwave Electronics, file e384c433-9d46-d4b2-e053-9f05fe0a1d67
|
5
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K-band GaAs Doherty Power Amplifiers for microwave backhaul, file 48bfcfab-4f05-41b2-8e09-a62532f3bfb3
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4
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Parameterized Surrogate Models of Microstrip Structures for Electromagnetic-Based Power Amplifier Design and Statistical Analysis, file 5cbf71df-4e48-4ab5-95fd-c23596943e52
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4
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Parameterized Surrogate Models of Microstrip Structures for Electromagnetic-Based Power Amplifier Design and Statistical Analysis, file 7aa884b5-a380-4063-9642-c60d2f112dbe
|
4
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Piezoresistive flexible composite for robotic tactile applications, file e384c42e-2e89-d4b2-e053-9f05fe0a1d67
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4
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K-band combined GaAs monolithic Doherty power amplifier, file e384c431-85c3-d4b2-e053-9f05fe0a1d67
|
4
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The ENERGY ECS Project: Smart and Secure Energy Solutions for Future Mobility, file 8be8d3dd-16d6-4f1e-8e14-9c70476170f6
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3
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The ENERGY ECS Project: Smart and Secure Energy Solutions for Future Mobility, file 92705b94-27ea-465c-9083-879ad9f4fb57
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3
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TCAD-based Pseudo-Common-Gate X-PAR Model for GaAs Stacked Power Amplifier Design, file bd558c24-2e58-4571-b13f-12bf0150fc0b
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3
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Ag nanoparticle-based inkjet printed planar transmission lines for RF and microwave applications: considerations on ink composition, nanoparticle size distribution and sintering time, file e384c42e-1826-d4b2-e053-9f05fe0a1d67
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3
|
The Doherty Power Amplifier: Review of Recent Solutions and Trends, file e384c42e-3a8b-d4b2-e053-9f05fe0a1d67
|
3
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On-wafer characterization setup for model extraction and validation of high-power GaN HEMT switches, file e384c42f-48eb-d4b2-e053-9f05fe0a1d67
|
3
|
Analysis & development of automated system for on-wafer channel thermal measurement of RF power devices using ordinary lab instruments, file e384c433-01f4-d4b2-e053-9f05fe0a1d67
|
3
|
Watt-level 21-25 GHz Integrated Doherty Power Amplifier in GaAs Technology, file e384c433-98a5-d4b2-e053-9f05fe0a1d67
|
3
|
Electronics for Microwave Backhaul, file e384c433-9c83-d4b2-e053-9f05fe0a1d67
|
3
|
Compact GaN-based Stacked Cells for 5G Applications at 26 GHz, file 3e4e7368-c355-4e37-a250-d76d5d24c7c1
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2
|
Concurrent Dual-Band SiGe HBT Power Amplifier for Wireless Applications, file e384c42e-0141-d4b2-e053-9f05fe0a1d67
|
2
|
Demonstration of inkjet-printed silver nanoparticle microstrip lines on alumina for RF power modules, file e384c42e-2b60-d4b2-e053-9f05fe0a1d67
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2
|
Assessment of silver nanoparticle inkjet-printed microstrip lines for RF and microwave applications2013 IEEE International Wireless Symposium (IWS), file e384c42e-2c7c-d4b2-e053-9f05fe0a1d67
|
2
|
Hybrid Ag-based inks for nanocomposite inkjet printed lines: RF properties, file e384c42e-2e8c-d4b2-e053-9f05fe0a1d67
|
2
|
13-bit GaAs serial-to-parallel converter with compact layout for core-chip applications, file e384c42e-30e8-d4b2-e053-9f05fe0a1d67
|
2
|
Low-Cost Instrument for Whispering Gallery Mode Thermometry up to 19 GHz, file e384c42e-fad2-d4b2-e053-9f05fe0a1d67
|
2
|
K-band MMIC power amplifier based on a 3-stacked GaAS pHEMT device, file e384c42f-05c4-d4b2-e053-9f05fe0a1d67
|
2
|
Concurrent Efficient Evaluation of Small-Change Parameters and Green's Functions for TCAD Device Noise and Variability Analysis, file e384c42f-5d44-d4b2-e053-9f05fe0a1d67
|
2
|
A Wideband Highly Linear Distributed Amplifier Using Intermodulation Cancellation Technique for Stacked-HBT Cell, file e384c432-3dfb-d4b2-e053-9f05fe0a1d67
|
2
|
Design strategy of a 2.8–3.6 GHz 20W GaN Doherty power amplifier, file e384c432-83d3-d4b2-e053-9f05fe0a1d67
|
2
|
3.1-3.6 GHz 22 W GaN Doherty Power Amplifier, file e384c432-96ff-d4b2-e053-9f05fe0a1d67
|
2
|
System Level Analysis of Millimetre-wave GaN-based MIMO Radar for Detection of Micro Unmanned Aerial Vehicles, file e384c432-a1b4-d4b2-e053-9f05fe0a1d67
|
2
|
A 3-3.8 GHz Class-J GaN HEMT Power Amplifier, file e384c432-c895-d4b2-e053-9f05fe0a1d67
|
2
|
A Balanced Stacked GaN MMIC Power Amplifier for 26-GHz 5G applications, file 13deefef-1f3f-42c6-aa40-e84c89804814
|
1
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Totale |
24.973 |