We present three-dimensional simulations of HgCdTe-based focal plane arrays (FPAs) with two-color and dual-band sequential infrared pixels having realistic truncated-pyramid shape taking into account the presence of compositionally-graded transition layers. Simulations emphasize the importance of a full-wave approach to the electromagnetic problem, and the evaluations of the optical and diffusive contribution to inter-pixel crosstalk indicate the effectiveness of deep trenches to prevent diffusive crosstalk in both wavebands.

Challenges in multiphysics modeling of dual-band HgCdTe infrared detectors / Vallone, M.; Goano, M.; Tibaldi, A.; Hanna, S.; Eich, D.; Sieck, A.; Figgemeier, H.; Ghione, G.; Bertazzi, F.. - STAMPA. - (2020), pp. 19-20. (Intervento presentato al convegno 20th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2020) tenutosi a Online conference nel September 2020) [10.1109/NUSOD49422.2020.9217778].

Challenges in multiphysics modeling of dual-band HgCdTe infrared detectors

Vallone, M.;Goano, M.;Tibaldi, A.;Ghione, G.;Bertazzi, F.
2020

Abstract

We present three-dimensional simulations of HgCdTe-based focal plane arrays (FPAs) with two-color and dual-band sequential infrared pixels having realistic truncated-pyramid shape taking into account the presence of compositionally-graded transition layers. Simulations emphasize the importance of a full-wave approach to the electromagnetic problem, and the evaluations of the optical and diffusive contribution to inter-pixel crosstalk indicate the effectiveness of deep trenches to prevent diffusive crosstalk in both wavebands.
2020
978-1-7281-6086-3
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2848162