With reference of our previous report [JNN 9, (2009) 6799], here we extended our work on ironnanoparticles embedded multiwall carbon nanotubes (MWCNTs) that were grown at 850 °C using chemical vapour deposition process that shows ferromagnetic as well as magnetic anisotropic behaviour due to the non-uniform distribution of 'Fe' particles in CNTs. The separation of 'Fe' nanoparticles from each other by the nonmagnetic carbon nanotube walls is preferably suitable for the application of magnetic storage devices, magnetic recording media and electromagnetic devices. The spin-related phenomenon in MWCNTs is demonstrated through a temperature dependent resistance curve through metal-insulator transition at ∼12.6 K and field effect magneto-resistance (MR). The minimal resistance is observed at 12.6 K. This result could provide the fabrication of nanometric-scale electronic devices and opening new opportunities to uncover deeper aspects of negative magnetoresistance effect.

Hall effect studies and magnetic behaviour in Fe-nanoparticle embedded multi wall CNTs / Ray, S. C.; Mishra, D. K.; Tagliaferro, A.. - In: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY. - ISSN 1533-4880. - 17:12(2017), pp. 9167-9171. [10.1166/jnn.2017.13883]

Hall effect studies and magnetic behaviour in Fe-nanoparticle embedded multi wall CNTs

Tagliaferro A.
2017

Abstract

With reference of our previous report [JNN 9, (2009) 6799], here we extended our work on ironnanoparticles embedded multiwall carbon nanotubes (MWCNTs) that were grown at 850 °C using chemical vapour deposition process that shows ferromagnetic as well as magnetic anisotropic behaviour due to the non-uniform distribution of 'Fe' particles in CNTs. The separation of 'Fe' nanoparticles from each other by the nonmagnetic carbon nanotube walls is preferably suitable for the application of magnetic storage devices, magnetic recording media and electromagnetic devices. The spin-related phenomenon in MWCNTs is demonstrated through a temperature dependent resistance curve through metal-insulator transition at ∼12.6 K and field effect magneto-resistance (MR). The minimal resistance is observed at 12.6 K. This result could provide the fabrication of nanometric-scale electronic devices and opening new opportunities to uncover deeper aspects of negative magnetoresistance effect.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2836810