We performed molecular dynamics simulations to study the atomic structure of the β-SiC/Si(001) and (111) interfaces. The wide lattice mismatch between the two materials (?20%) introduces an array of misfit dislocations along the interface, responsible for releasing almost all the strain which would be present in a pseudomorphic structure. The interface termination, its stoichiometry and the core dislocation structures are discussed here; for the most stable heterostructures, the simulated HREM images are presented, and the features connected to the peculiar interface reconstructions shown.

Combined HREM and theoretical analysis of SiC/Si interfaces / Grillo, V.; Frabboni, S.; Cicero, G.; Savini, G.; Catellani, A. - In: Microscopy of Semiconducting Materials 2003STAMPA. - [s.l] : CRC Press, 2003. - ISBN 9781351074636. - pp. 69-72 [10.1201/9781351074636]

Combined HREM and theoretical analysis of SiC/Si interfaces

Cicero G.;
2003

Abstract

We performed molecular dynamics simulations to study the atomic structure of the β-SiC/Si(001) and (111) interfaces. The wide lattice mismatch between the two materials (?20%) introduces an array of misfit dislocations along the interface, responsible for releasing almost all the strain which would be present in a pseudomorphic structure. The interface termination, its stoichiometry and the core dislocation structures are discussed here; for the most stable heterostructures, the simulated HREM images are presented, and the features connected to the peculiar interface reconstructions shown.
2003
9781351074636
Microscopy of Semiconducting Materials 2003
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2836174