Physics-based Analysis to Address Critical Aspects of FinFET Mm-wave Applications: Variability and Thermal Management

A numerically efficient TCAD approach for the sensitivity analysis of electron devices is exploited for the assessment of the critical aspects of FinFET technology for mm-waves applications. We provide temperature and bias-dependent 3D variability analysis of the DC current for a FinFET structure from the 22 nm node, showing how to predict and mitigate the effects of poor FinFET thermal management. The AC variability analysis is also extensively used, to assess how doping or geometric device variations impact on the insertion loss and bandwidth of a 70 GHz high gain amplifier with transformer matching.