Majority carrier depletion has been proposed as a method to suppress the dark current originating from quasi-neutral regions in HgCdTe infrared focal plane array detectors. However, a very low doping level is usually required for the absorber layer, a task quite difficult to achieve in realizations. In order to address this point, we performed combined electromagnetic and electric simulations of a planar 5×5 pixel miniarray with 5 µm wide square pixels, assessing the effect of the absorber thickness, its doping level in the interval =[1014,1015]cm−3, and temperature in the interval 140 K–230 K, both in the dark and under illumination. Looking for a trade-off, we found that the path towards high-temperature operation has quite stringent requirements on the residual doping, whereas a reduction of the absorber thickness helps only moderately to reduce the dark current. Under illumination, interpixel cross talk is only slightly cut down by a decrease of temperature or absorber doping in the considered intervals, whereas it gets more effectively reduced by thinning the absorber.

Constraints and performance trade-offs in Auger-suppressed HgCdTe focal plane arrays / Vallone, Marco; Goano, Michele; Bertazzi, Francesco; Ghione, Giovanni; Hanna, Stefan; Eich, Detlef; Sieck, Alexander; Figgemeier, Heinrich. - In: APPLIED OPTICS. - ISSN 1559-128X. - 59:17(2020), pp. E1-E8. [10.1364/AO.385075]

Constraints and performance trade-offs in Auger-suppressed HgCdTe focal plane arrays

Vallone, Marco;Goano, Michele;Bertazzi, Francesco;Ghione, Giovanni;
2020

Abstract

Majority carrier depletion has been proposed as a method to suppress the dark current originating from quasi-neutral regions in HgCdTe infrared focal plane array detectors. However, a very low doping level is usually required for the absorber layer, a task quite difficult to achieve in realizations. In order to address this point, we performed combined electromagnetic and electric simulations of a planar 5×5 pixel miniarray with 5 µm wide square pixels, assessing the effect of the absorber thickness, its doping level in the interval =[1014,1015]cm−3, and temperature in the interval 140 K–230 K, both in the dark and under illumination. Looking for a trade-off, we found that the path towards high-temperature operation has quite stringent requirements on the residual doping, whereas a reduction of the absorber thickness helps only moderately to reduce the dark current. Under illumination, interpixel cross talk is only slightly cut down by a decrease of temperature or absorber doping in the considered intervals, whereas it gets more effectively reduced by thinning the absorber.
2020
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2795364