We report experimental evidence of coexistence between passive mode-locking (ML) solutions and laser off state in a monolithic two sections InAs/InGaAs Quantum Dot (QD) semiconductor laser. The considered device has a 0.4 mm long straight absorber and a 2.380 mm long active region characterized by a 2° full taper angle. The active side facet is as cleaved, while the absorber side facet is high reflection coated.

Experimental and theoretical evidences of hysteresis in passive mode-locked quantum dots lasers / Columbo, L.; Bardella, P.; Auth, D.; Weber, C.; Breuer, S.. - ELETTRONICO. - (2019), pp. 1-1. ((Intervento presentato al convegno 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019 tenutosi a Munich, Germany nel 23-27 June 2019 [10.1109/CLEOE-EQEC.2019.8871933].

Experimental and theoretical evidences of hysteresis in passive mode-locked quantum dots lasers

Columbo L.;Bardella P.;
2019

Abstract

We report experimental evidence of coexistence between passive mode-locking (ML) solutions and laser off state in a monolithic two sections InAs/InGaAs Quantum Dot (QD) semiconductor laser. The considered device has a 0.4 mm long straight absorber and a 2.380 mm long active region characterized by a 2° full taper angle. The active side facet is as cleaved, while the absorber side facet is high reflection coated.
978-1-7281-0469-0
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11583/2767480