Archivio Istituzionale della RicercaThe Green’s Function based TCAD device variability analysis is extended to allow for temperature-dependent variability, with negligible overhead in terms of simulation time with respect to fixed temperature simulations. We provide temperature and bias-dependent 3D variability analysis of the DC current for a FinFET structure from the 22 nm node, showing how to predict and mitigate the effects of poor thermal management. Based on the quasi-stationary assumption, preliminary analysis of self-heating effects of a FinFET medium power amplifier is also presented.
TCAD analysis of FinFET temperature-dependent variability for analog applications / Guerrieri, S. Donati; Bonani, F.; Ghione, G.. - ELETTRONICO. - (2019), pp. 1-4. (Intervento presentato al convegno 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) tenutosi a Udine (Italy) nel 4-6 Sept. 2019) [10.1109/SISPAD.2019.8870492].
TCAD analysis of FinFET temperature-dependent variability for analog applications
Guerrieri, S. Donati;Bonani, F.;Ghione, G.
2019
Abstract
The Green’s Function based TCAD device variability analysis is extended to allow for temperature-dependent variability, with negligible overhead in terms of simulation time with respect to fixed temperature simulations. We provide temperature and bias-dependent 3D variability analysis of the DC current for a FinFET structure from the 22 nm node, showing how to predict and mitigate the effects of poor thermal management. Based on the quasi-stationary assumption, preliminary analysis of self-heating effects of a FinFET medium power amplifier is also presented.
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https://hdl.handle.net/11583/2761129
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