The book presents a comprehensive treatment of the numerical simulation of semiconductor devices. After an overview of the basic physics of fluctuations in semiconductors, noise modelling techniques are introduced for the small-signal case. In particular, a detailed treatment is devoted to Green's function approaches such as the Impedance Field Method. Then, the numerical implementation of such approaches within the framework of multi-dimensional numerical device models is discussed in detail with reference to the customary Finite-Boxes discretization scheme. Finally, the topic of large-signal noise simulation is addressed within the framework of the Harmonic Balance approach, and implementation details are given for the non-autonomous case. The application fields covered range from low-noise, small-signal amplifiers to nonlinear circuits such as RF and microwave frequency multipliers and mixers.

Noise in Semiconductor Devices / Bonani, Fabrizio; Ghione, Giovanni. - ELETTRONICO. - 7:(2001), pp. 1-240. [10.1007/978-3-662-04530-5]

Noise in Semiconductor Devices

Fabrizio Bonani;Giovanni Ghione
2001

Abstract

The book presents a comprehensive treatment of the numerical simulation of semiconductor devices. After an overview of the basic physics of fluctuations in semiconductors, noise modelling techniques are introduced for the small-signal case. In particular, a detailed treatment is devoted to Green's function approaches such as the Impedance Field Method. Then, the numerical implementation of such approaches within the framework of multi-dimensional numerical device models is discussed in detail with reference to the customary Finite-Boxes discretization scheme. Finally, the topic of large-signal noise simulation is addressed within the framework of the Harmonic Balance approach, and implementation details are given for the non-autonomous case. The application fields covered range from low-noise, small-signal amplifiers to nonlinear circuits such as RF and microwave frequency multipliers and mixers.
2001
978-3-642-08586-4
978-3-662-04530-5
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2759252
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