This work presents a self biased current reference circuit based on the MOSFET Zero Temperature Coefficient (ZTC) condition. To achieve lower supply voltage (VDD) operation, the proposed circuit employs forward body biasing technique to decrease the MOSFET ZTC biasing point. In addition, a body-driven pseudo differential Operational Transconductance Amplifier (OTA) is used to further reduce the minimum supply voltage. From transitor-level simulations, the current reference is predicted to have an Effective Temperature Coefficient (TCeff ) of 65 ppm/oC from -55 to 125 oC and a fabrication sensitivity of s/u= 6.5 %, including process and mismatch variability. The power supply sensitivity is around 0.75 %=V for this new reference.
A 0.6 V Current Reference Based on the MOSFET Forward-Body-Biased ZTC Condition / Luis Henrique Rodovalho, ; Pedro, Toledo. - ELETTRONICO. - (2019). (Intervento presentato al convegno 26th IEEE International Conference on Electronics Circuits and Systems).
A 0.6 V Current Reference Based on the MOSFET Forward-Body-Biased ZTC Condition
Pedro Toledo
2019
Abstract
This work presents a self biased current reference circuit based on the MOSFET Zero Temperature Coefficient (ZTC) condition. To achieve lower supply voltage (VDD) operation, the proposed circuit employs forward body biasing technique to decrease the MOSFET ZTC biasing point. In addition, a body-driven pseudo differential Operational Transconductance Amplifier (OTA) is used to further reduce the minimum supply voltage. From transitor-level simulations, the current reference is predicted to have an Effective Temperature Coefficient (TCeff ) of 65 ppm/oC from -55 to 125 oC and a fabrication sensitivity of s/u= 6.5 %, including process and mismatch variability. The power supply sensitivity is around 0.75 %=V for this new reference.File | Dimensione | Formato | |
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A_sub_0_6_V_self_biased_current_reference_circuit_based_in_the_MOSFET_ZTC_condition(1).pdf
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https://hdl.handle.net/11583/2758573
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