On our way to develop a multiphysical model of VCSELs including carrier transport, electromagnetic propagation, and heat conduction, we discuss some critical aspects of the adopted multiscale strategy. In particular, we address the inclusion of non-classical corrections within a classical carrier-transport framework, and the possibilities offered by rigorous approaches such as the nonequilibrium Green's function (NEGF) towards the determination of some critical parameters, bridging from the nanometer to the macroscopic scale. This seems a promising line of action towards the simulation and optmization of 3D highly nanostructured devices such as VCSELs.

Bridging scales in multiphysical VCSEL modeling / Tibaldi, A; Gonzalez Montoya, Ja; Bertazzi, F; Goano, M; Debernardi, P. - STAMPA. - (2018), pp. 19-20. (Intervento presentato al convegno 18th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2018) tenutosi a Hong Kong, China nel 05-09 November 2018) [10.1109/NUSOD.2018.8570284].

Bridging scales in multiphysical VCSEL modeling

Tibaldi, A;Gonzalez Montoya, JA;Bertazzi, F;Goano, M;
2018

Abstract

On our way to develop a multiphysical model of VCSELs including carrier transport, electromagnetic propagation, and heat conduction, we discuss some critical aspects of the adopted multiscale strategy. In particular, we address the inclusion of non-classical corrections within a classical carrier-transport framework, and the possibilities offered by rigorous approaches such as the nonequilibrium Green's function (NEGF) towards the determination of some critical parameters, bridging from the nanometer to the macroscopic scale. This seems a promising line of action towards the simulation and optmization of 3D highly nanostructured devices such as VCSELs.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2728363