In this work, the implementation of a compact electro-thermal model of a trench gate field-stop IGBT device is presented. The primary target is to address system-level mixed signal multi-domain simulation where the simulation time is a key factor for the usefulness of results. The methodology adopted provides a model suitable for use on both SPICE-only simulators, where thermal behavior is mapped to electrical quantities, and on a multi-domain environment, where heterogeneous physical domains are managed by a simulation engine. A comparison with real device characteristics is presented to show model accuracy and finally a simulation of an inverter circuit is investigated to highlight achievable performances.

A compact IGBT electro-thermal model in Verilog-A for fast system-level simulation / Lena, Davide; Grosso, Michelangelo; Bocca, Alberto; Macii, Alberto; Rinaudo, Salvatore. - STAMPA. - (2016), pp. 3793-3798. (Intervento presentato al convegno IECON 2016 - 42nd Annual Conference of the IEEE Industrial Electronics Society tenutosi a Florence, Italy nel 24-27 October 2016) [10.1109/IECON.2016.7793376].

A compact IGBT electro-thermal model in Verilog-A for fast system-level simulation

BOCCA, ALBERTO;MACII, Alberto;
2016

Abstract

In this work, the implementation of a compact electro-thermal model of a trench gate field-stop IGBT device is presented. The primary target is to address system-level mixed signal multi-domain simulation where the simulation time is a key factor for the usefulness of results. The methodology adopted provides a model suitable for use on both SPICE-only simulators, where thermal behavior is mapped to electrical quantities, and on a multi-domain environment, where heterogeneous physical domains are managed by a simulation engine. A comparison with real device characteristics is presented to show model accuracy and finally a simulation of an inverter circuit is investigated to highlight achievable performances.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2662863
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