Archivio Istituzionale della RicercaA CAD approach (using a hybrid finite-element Green's function strategy) is described for the thermal analysis of GaAs and III-V compound semiconductor devices and integrated circuits. The approach is based on a computationally efficient 3D large-scale thermal simulator allowing for non-linear multilayered and thinned substrates, via holes, and heat conduction through surface metallizations. Simulation examples concerning devices and circuits are discussed to demonstrate the simulator capabilities
Thermal CAD for power III-V devices and MMICs / Bonani, Fabrizio; Ghione, Giovanni; Pirola, Marco; C., Naldi. - STAMPA. - 1:(1995), pp. 352-357. (Intervento presentato al convegno Microwave and Optoelectronics Conference, 1995 SBMO/IEEE MTT-S International nel 1995-jul) [10.1109/SBMOMO.1995.509645].
Thermal CAD for power III-V devices and MMICs
BONANI, Fabrizio;GHIONE, GIOVANNI;PIROLA, Marco;
1995
Abstract
A CAD approach (using a hybrid finite-element Green's function strategy) is described for the thermal analysis of GaAs and III-V compound semiconductor devices and integrated circuits. The approach is based on a computationally efficient 3D large-scale thermal simulator allowing for non-linear multilayered and thinned substrates, via holes, and heat conduction through surface metallizations. Simulation examples concerning devices and circuits are discussed to demonstrate the simulator capabilities
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https://hdl.handle.net/11583/2499405
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