A novel, two-dimensional technique for the physical noise modeling of monopolar devices, based on the impedance-field method, is presented. The impedance field is computed by means of an efficient approach based on the introduction of an adjoint problem, according to a method already successfully applied to noise analysis in lumped networks. The same approach can also be used for computing device sensitivities with respect to parameter variations. As an example, preliminary results are discussed relative to the application of the method to GaAs MESFETs

Physical noise modelling of majority-carrier devices: an adjoint-network approach / Ghione, Giovanni; E., Bellotti; F., Filicori. - (1989), pp. 327-330. (Intervento presentato al convegno Electron Devices Meeting, 1989. IEDM '89 nel 1989-dec) [10.1109/IEDM.1989.74290].

Physical noise modelling of majority-carrier devices: an adjoint-network approach

GHIONE, GIOVANNI;
1989

Abstract

A novel, two-dimensional technique for the physical noise modeling of monopolar devices, based on the impedance-field method, is presented. The impedance field is computed by means of an efficient approach based on the introduction of an adjoint problem, according to a method already successfully applied to noise analysis in lumped networks. The same approach can also be used for computing device sensitivities with respect to parameter variations. As an example, preliminary results are discussed relative to the application of the method to GaAs MESFETs
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2499372
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