A gauge-invariant formulation of high-field transport in semiconductors is proposed. We revisit the conventional description of carrier–phonon scattering within the Fermi golden rule scheme by means of a gauge-invariant generalization of the scattering rates. With a density-matrix approach, we show that the so-called intracollisional field effect, as usually accounted for, has always been overestimated due to the neglect of the time variation of the basis states, which in turn leads to a ill-defined Markov limit in the carrier–phonon interaction process. This is confirmed by a fully three-dimensional simulation of charge transport in state-of-the-art semiconductor superlattices.
Intracollisional field effect: a gauge-invariant formulation in semiconductors / Ciancio E. Iotti RC.; Rossi F.. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - 19:4(2004), pp. S212-S214. [10.1088/0268-1242/19/4/072]
|Titolo:||Intracollisional field effect: a gauge-invariant formulation in semiconductors|
|Data di pubblicazione:||2004|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1088/0268-1242/19/4/072|
|Appare nelle tipologie:||1.1 Articolo in rivista|
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