Hydrogenated amorphous silicon carbon films of different carbon content were deposited by plasma enhanced chemical vapour deposition at low substrate temperature (200 °C) and were subjected to excimer laser annealing. X-ray diffraction spectra and field emission scanning electron microscopy images demonstrate that carbon content plays an important role in facilitating the crystallization process induced by the excimer laser treatment
Study on the excimer laser annealedamorphous hydrogenated siliconcarbon films deposited by PECVD / Ambrosone, G; Basa, D. K.; Coscia, U; Tresso, Elena Maria; Chiodoni, Angelica; Celasco, Edvige; Pinto, N; Murri, R.. - In: PHYSICA STATUS SOLIDI. C, CURRENT TOPICS IN SOLID STATE PHYSICS. - ISSN 1862-6351. - STAMPA. - 7:3-4(2010), pp. 770-773. [10.1002/pssc.200982680]
Study on the excimer laser annealedamorphous hydrogenated siliconcarbon films deposited by PECVD
TRESSO, Elena Maria;CHIODONI, ANGELICA;CELASCO, EDVIGE;
2010
Abstract
Hydrogenated amorphous silicon carbon films of different carbon content were deposited by plasma enhanced chemical vapour deposition at low substrate temperature (200 °C) and were subjected to excimer laser annealing. X-ray diffraction spectra and field emission scanning electron microscopy images demonstrate that carbon content plays an important role in facilitating the crystallization process induced by the excimer laser treatmentPubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
https://hdl.handle.net/11583/2342551
Attenzione
Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo