Hydrogenated amorphous silicon carbon films of different carbon content were deposited by plasma enhanced chemical vapour deposition at low substrate temperature (200 °C) and were subjected to excimer laser annealing. X-ray diffraction spectra and field emission scanning electron microscopy images demonstrate that carbon content plays an important role in facilitating the crystallization process induced by the excimer laser treatment

Study on the excimer laser annealedamorphous hydrogenated siliconcarbon films deposited by PECVD / Ambrosone, G; Basa, D. K.; Coscia, U; Tresso, Elena Maria; Chiodoni, Angelica; Celasco, Edvige; Pinto, N; Murri, R.. - In: PHYSICA STATUS SOLIDI. C, CURRENT TOPICS IN SOLID STATE PHYSICS. - ISSN 1862-6351. - STAMPA. - 7:3-4(2010), pp. 770-773. [10.1002/pssc.200982680]

Study on the excimer laser annealedamorphous hydrogenated siliconcarbon films deposited by PECVD

TRESSO, Elena Maria;CHIODONI, ANGELICA;CELASCO, EDVIGE;
2010

Abstract

Hydrogenated amorphous silicon carbon films of different carbon content were deposited by plasma enhanced chemical vapour deposition at low substrate temperature (200 °C) and were subjected to excimer laser annealing. X-ray diffraction spectra and field emission scanning electron microscopy images demonstrate that carbon content plays an important role in facilitating the crystallization process induced by the excimer laser treatment
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2342551
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