A model for calculating exciton binding energies in quantum wells (QWs) is presented, which can be applied to situations in which one of the two band discontinuities is large, while the second one can be arbitrary (positive, negative, or zero). The model is applied to ZnSe/ZnSSe and InGaAs/GaAs QWs. The crossover between strong- and weak-confinement regimes for excitons in narrow QWs is studied within a simplified model with two one-parameter variational wave functions.

Binding energies and oscillator strengths of excitons in shallow quantum wells / Iotti, Rita Claudia; Andreani, L. C.. - In: NUOVO CIMENTO DELLA SOCIETÀ ITALIANA DI FISICA. D CONDENSED MATTER, ATOMIC, MOLECULAR AND CHEMICAL PHYSICS, BIOPHYSICS. - ISSN 0392-6737. - STAMPA. - 17:11-12(1995), pp. 1505-1508. [10.1007/BF02457234]

Binding energies and oscillator strengths of excitons in shallow quantum wells

IOTTI, Rita Claudia;
1995

Abstract

A model for calculating exciton binding energies in quantum wells (QWs) is presented, which can be applied to situations in which one of the two band discontinuities is large, while the second one can be arbitrary (positive, negative, or zero). The model is applied to ZnSe/ZnSSe and InGaAs/GaAs QWs. The crossover between strong- and weak-confinement regimes for excitons in narrow QWs is studied within a simplified model with two one-parameter variational wave functions.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/1659057
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