The properties of tetrahedrally bonded ternary amorphous semiconductors a-CSiSn:H and a-CSiGe:H are reviewed with particular emphasis on the temperature dependence of dark conductivity and the coordination in random networks. It is shown here that the dark conductivity as a function of the temperature strongly depends on the carbon content and, more precisely, on the proportion of sp3 and sp2 sites in the carbon. Ternary alloys with different carbon contents are compared to binary alloys using the average coordination number. The ternary alloys have an average coordination number close to the optimal value predicted for amorphous covalent networks.

Tetrahedrally bonded ternary amorphous semiconductor alloys / F., Demichelis; Kaniadakis, Giorgio; Tagliaferro, Alberto; Tresso, Elena Maria. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - 40:(1989), pp. 1647-1651. [10.1103/PhysRevB.40.1647]

Tetrahedrally bonded ternary amorphous semiconductor alloys

KANIADAKIS, Giorgio;TAGLIAFERRO, Alberto;TRESSO, Elena Maria
1989

Abstract

The properties of tetrahedrally bonded ternary amorphous semiconductors a-CSiSn:H and a-CSiGe:H are reviewed with particular emphasis on the temperature dependence of dark conductivity and the coordination in random networks. It is shown here that the dark conductivity as a function of the temperature strongly depends on the carbon content and, more precisely, on the proportion of sp3 and sp2 sites in the carbon. Ternary alloys with different carbon contents are compared to binary alloys using the average coordination number. The ternary alloys have an average coordination number close to the optimal value predicted for amorphous covalent networks.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/1406390
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