We propose that recently realized T-shaped semiconductor quantum wires (T wires) could be exploited as three-terminal quantum interference devices. T wires are formed by intersecting two quantum wells (QWs). By use of a scattering matrix approach and Landauer–Büttiker theory, we calculate the conductance for ballistic transport in the parent QWs and across the wire region as a function of the injection energy. We show that different conductance profiles can be selected by tailoring the widths of the QWs and/or by combining more wires on the scale of the Fermi wavelength. Finally, we discuss the possibility of obtaining spin-dependent conductance of ballistic holes in the same structures.
Quantum interference in nanometric devices: Ballistic transport across arrays of T-shaped quantum wires / Goldoni, G.; Rossi, Fausto; Molinari, E.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 71:11(1997), pp. 1519-1521. [10.1063/1.119954]
Quantum interference in nanometric devices: Ballistic transport across arrays of T-shaped quantum wires
ROSSI, FAUSTO;
1997
Abstract
We propose that recently realized T-shaped semiconductor quantum wires (T wires) could be exploited as three-terminal quantum interference devices. T wires are formed by intersecting two quantum wells (QWs). By use of a scattering matrix approach and Landauer–Büttiker theory, we calculate the conductance for ballistic transport in the parent QWs and across the wire region as a function of the injection energy. We show that different conductance profiles can be selected by tailoring the widths of the QWs and/or by combining more wires on the scale of the Fermi wavelength. Finally, we discuss the possibility of obtaining spin-dependent conductance of ballistic holes in the same structures.File | Dimensione | Formato | |
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https://hdl.handle.net/11583/1405280
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